Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

Efficient Power Conversion (EPC) strengthens market leadership in gallium nitride power conversion by adding significant 8-inch manufacturing capacities in collaboration with Vanguard International Semiconductor Corporation (VIS).

EL SEGUNDO, Calif.— December 6, 2022 — EPC, the world’s leader in gallium nitride (GaN) power FETs and integrated circuits (ICs), and Vanguard International Semiconductor Corporation (VIS), a leading specialty IC foundry service provider, today jointly announced a multi-year production agreement to produce gallium nitride-based power semiconductors. EPC will utilize VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023.

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

Easy Engineering interviewed EPC’s Director of Marketing, Renee Yawger, on the current state of GaN adoption and the future of GaN technology.

Easy Engineering
May, 2022
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EPC introduces the 100 V, 2.2 mΩ EPC2071 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. 

The mainstream materials for wide-bandgap (WBG) semiconductor power components are silicon carbide (SiC) and gallium nitride (GaN). They become various power system applications' most-preferred devices today with the rising awareness of energy conservation and sustainability. This was the first time Tech Taipei 2022 Conference used WBG as its theme. Speakers from key players in the industry were invited from design, manufacturing and testing fields to share with over 400 participants at the conference their latest technology and application trends.

EE Times Taiwan
March 25, 2022
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As servers move to 48V, GaN transistors will beat today's silicon MOSFETs, leading to better performance and cost.

Data Center Dynamics
March, 2022
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The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.

EL SEGUNDO, Calif.—  January, 2022 — EPC announces the availability of the EPC9166, a 500 W DC-DC demo board that converts a 12 V input to 48 V output. The EPC9166 demo board demonstrates the Renesas ISL81807 80 V two-phase synchronous boost controller with the latest generation EPC2218 eGaN FETs from EPC to achieve greater than 96.5% efficiency in a 12 V input to 48 V regulated output conversion with 500 kHz switching frequency.  The output voltage can be configured to 36 V, 48 V, and 60 V. The board can deliver 480 W power without a heatsink.

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum R_DS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm² footprint.

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN^® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET. 

With the continuous and fast-paced growth of data processing infrastructures, higher power levels that can be delivered in smallest areas are demanded.

Power Systems Design
September, 2021
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Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN^® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16^th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

The combination of MPS (Monolithic Power Systems) controllers with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 1700 W/in³ in high efficiency, low cost LLC DC-DC Conversion

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high power density, low-cost DC-DC conversion demonstrated in the EPC9151 power module.

EL SEGUNDO, Calif.— December, 2020 — EPC announces the availability of the EPC9151, a 300 W bidirectional DC-DC voltage regulator in the in the very small 16^th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). The EPC9151 power module features Microchip’s dsPIC33CK digital signal controller (DSC) with the EPC2152 ePower™ Stage integrated circuit from EPC to achieve greater than 95% efficiency in a 300 W 48 V to/from 12 V converter design.  Additional phases can be added to this scalable 2-phase design to further increase power.

EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN^® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification.

EL SEGUNDO, Calif. — November 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET.  This device is the latest in a family of 100 V – 200 V solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V – 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD/LED TVs, and LED lighting.

EPC has posted additional modules to the educational video podcast series focusing on reliability and leading-edge applications including high-density computing for Artificial Intelligence (AI), lidar for robots, drones, and cars, and Class-D audio using gallium nitride FETs and ICs.

EL SEGUNDO, Calif. – April 2020 – Efficient Power Conversion (EPC) Corporation has posted an update to its popular “How to GaN” video podcast series. The six videos included in the current release of the series provide practical examples to help designers employ GaN technology to create state-of-the-art DC-DC converters for AI servers and ultra-thin laptops, lidar for robots, drones, and autonomous cars, and audio systems with the highest quality acoustics possible.

It is expected that there will be more than 175 zettabytes of data by 2025. Data center construction and deployment, as well as upgrading efforts in existing older ones, is booming with the advent of 5G, starting in earnest at the 2020 Olympics in Japan (6G is already being discussed for future development) and the growth of artificial intelligence (AI) and machine learning (ML).

It makes so much sense to me that GaN should be the power transistor of choice in Data Center power architectures where size, efficiency and speed are critical. In all the topologies with 48 VIN, the highest efficiency was achieved with GaN devices.

EDN
June 2019
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