Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

Bodo’s Power Systems
June, 2024
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The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

Bodo’s Power Systems
May, 2024
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EPC introduces the 50 V, 8.5 mOhm EPC2057 GaN FET in tiny 1.5 mm x 1.2 mm footprint, offering higher power density for USB-C PD applications.

EL SEGUNDO, Calif.— June 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

EPC introduces EPC2045 and EPC2047 eGaN^® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.

EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200 V EPC2047.