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The EPC91200 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications
EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®)
power devices introduces the EPC91200, a fully configured motor drive inverter reference design that delivers exceptional
performance and flexibility for a variety of industrial and battery-powered applications.
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Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.
E-Mobility Engineering
March 2024
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The EPC9194 GaN-based inverter reference design significantly enhances motor drive system efficiency, range, and torque, while more than doubling power per weight. The inverter’s extremely compact size allows seamless integration into the motor housing resulting in the lowest electromagnetic interference (EMI,) highest density, and lowest weight.
EL SEGUNDO, Calif.— October, 2023 — EPC announces the availability of the EPC9194, a
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The EPC9186 GaN-based inverter reference design enhances motor system performance, range, precision, and torque for high power applications.
EL SEGUNDO, Calif.— May, 2023 — EPC announces the availability of the EPC9186, a 3-phase BLDC motor drive inverter using the EPC2302 eGaN® FET. The EPC9186 supports a wide input DC voltage ranging from 14 V to 80 V. The high-power capability of the EPC9186 supports applications such as electric scooters, small electric vehicles, agricultural machinery, forklifts, and high-power drones.
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EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.
EL SEGUNDO, Calif. — March 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations at the premier power electronics conference; the IEEE Applied Power Electronics Conference and Exposition (APEC 2023) in Orlando from March 19th through the 23rd (see detailed schedule below). In addition, the company will demonstrate it’s latest generation of eGaN® FETs and ICs in applications ranging from high-power density computing, eMobility, robotics, solar power, battery charging, and more in booth # 732 in the Orange County Convention Center. Stop by to see the ‘Wall of GaN’ – the broadest portfolio of GaN power semiconductors in the market available for off-the-shelf delivery.
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EPC and Richtek introduce a reference design that achieves greater than 98% efficiency using the RT6190 buck boost controller and EPC2204 EPC GaN FETs
EL SEGUNDO, Calif.— January 2023 — EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V - 24 V to a regulated 5 V - 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek RT6190 controller with ultra-efficient EPC2204 GaN FETs from EPC shrinks the solution size by greater than 20% compared to traditional solutions for high-power density applications. The solution achieves greater than 98% efficiency for 20 V and 12 V output voltage and can operate without heatsink with maximum rise temperature below 15 degC for 20 V to 5 V, and 55 degC for 12 V to 20 V, at 5 A continuous current.
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This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.
IEEE 2022 AEIT International Annual Conference (AEIT)
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Note: This site requires IEEE membership to access full paper.
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The EPC9176 GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
EL SEGUNDO, Calif.— October, 2022 — EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower™ Stage GaN IC with embedded gate driver function and two GaN FETs with 5.2 mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk (20 ARMS). This voltage range and power level makes the solution ideal for a variety of 3-Phase BLDC motor drive applications with 36 V – 80 V input including eBikes, eScooters, power tools, drones, robots, DC servo, medical robots and factory automation.
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New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications
EL SEGUNDO, Calif.— September, 2022 — EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets. The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.
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In this PCIM interview EPC CEO, Alex Lidow, explains how GaN FETs and ICs developed by EPC provide the short pulse widths needed for higher-resolution LiDAR that enable autonomy as well as other vision-based systems.
Electronic Design
May, 2022
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EPC’s GaN Experts will be available during PCIM Europe 2022, exhibiting various demonstrations of how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.
EL SEGUNDO, Calif. — April 2022 — The EPC team will be delivering multiple technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2022 in Nuremburg, 10 – 12 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 113.
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The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive applications such as industrial drones, e-bikes, scooters, power tools.
Bodo’s Power Systems
April, 2022
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The EPC9171 evaluation board converts 90 – 265 V universal AC input to a DC output voltage adjustable over a wide range of 15 V through 48 V. This reference design can supply 240 W maximum output power at 48 V output voltage and 5 A load current.
EL SEGUNDO, Calif.— March, 2022 — EPC announces the availability of the EPC9171, a 90 V – 260 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers. This reference design can deliver 240 W maximum output power at 48 V output voltage and 5 A load
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A bidirectional converter developed by gallium nitride specialist EPC in collaboration with MPS operates at an advertised peak efficiency of 97 percent.
EETimes
February, 2022
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The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
EL SEGUNDO, Calif.— February, 2022 — EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN® FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version:
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The EPC9165 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency
EL SEGUNDO, Calif.— February 2022 — EPC announces the availability of the EPC9165, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 97 % peak efficiency in a small footprint. This solution is ideal for high-density and high-power 48V battery packs such as those required for eMobility and light mobility.
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EPC has introduced a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers an ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.
Bodo’s Power Systems
February, 2022
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The EPC9170 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency
EL SEGUNDO, Calif.— January 2022 — EPC announces the availability of the EPC9170, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 96.8% peak efficiency in a small footprint. The board features the ePower™ 100 V, 65 A integrated circuit chipset. The chipset includes the EPC23101 eGaN® IC plus EPC2302 eGaN® FET for a solution capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.
Power Electronics News
January, 2022
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In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.
Energies Journal
October, 2021
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