EPC9059 : High Current GaN POL

30 V Half Bridge Parallel Evaluation Board
For High Current 应用

The EPC9059 development board features two 30 V EPC2100 eGaNICs operating in parallel with a single onboard gate drive to achieve higher output currents.

This board showcases the performance capabilities of the integrated half-bridge devices in a high current Point-of-Load (POL) application. This board has shown a peak efficiency near 90% when operating at 1 MHz switching frequency.

购买 eGaN FET及集成电路



EPC Development Board
EPC Development Board
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 30 V for EPC2100 eGaN monolithic half bridge IC
(2) Maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage, and thermal cooling. EPC2100 eGaNIC intended for high step-down ratio applications.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.