EPC9006:开发板

EPC Development Board

VDS(最大值)、100 V
ID(RMS最大值)、5 A
带板载驱动器的半桥配置

The EPC9006 development board is 2” x 1.5” and contains not only two EPC2007 eGaN FET in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

产品状况:停产产品
在全新设计中,请採用EPC9006C产品
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对EPC公司的
eGaN FET及集成电路
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