EPC9035 - Development Board

EPC9035 : 100 V 半桥开发板

EPC Development Board

The EPC9035 development board is a 100 V maximum device voltage, 30 A maximum output current, half bridge with onboard gate drives, featuring the EPC2022 enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2022 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

购买 eGaN FET及集成电路



* Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermals.
# 取决于“更新”高侧自举电路电源电压的所需时间。