EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements.
Our eGaN FETs and ICs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon.
In order to make EPC’s eGaN FETs easy to use, we developed devices that behave very much like silicon power MOSFETs. User friendly tools make it easy to apply a new type of device. EPC has developed a comprehensive list of third-order device models so engineers can quickly design and implement circuits with minimum waste.