EPC技术文章

FET Roundup: eGaN FETs, Next-gen SiC FETs, and “RibbonFETs” Hit the Scene

This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.

All About Circuits
October, 2021
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Power Bricks Get an Efficiency Boost with GaN

The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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Utilizing GaN Inverters for Battery-Powered Motor Drive Applications

GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.

EEPower
October, 2021
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LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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Exploring the Frontiers of GaN Power Devices

Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
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应对用于超薄计算应用的超薄并具高功率密度的 48 V DC/DC 转换器的电源和磁性设计挑战

在过去十年中,计算机、显示器、智能手机和其他消费电子系统变得更薄,同时功能也变得更强大。因此,市场对具有更高功率密度的更纤薄电源解决方案的需求不断增加。本文研究了额定功率为 250 W且超薄的48 V / 20 V转换器,它可以采用各种非隔离型 DC/DC 降压拓扑的可行性。我们研究了各种非隔离型拓扑的优缺点,从而了解拓扑如何影响功率晶体管和磁性元件的选择,特别是电感器,因为这两个器件产生转换器的大部分损耗。本文还详细分析了为这些应用设计薄型电感器所面对的挑战,包括电感器损耗的因素、电感器尺寸和设计权衡,包括对 EMI 的影响。我们是以选择、构建和测试了超薄多电平转换器拓扑。从该转换器获得的实验结果,用于进一步优化操作设置和元件的选择,从而实现超过 98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年9月
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采用 eGaN FET 的高效、高密度1/8 砖1 kW LLC 谐振转换器

随着数据处理基础设施的持续快速增长,市场要求在最小的占板面积内提供更高的功率。

Power Systems Design
2021年9月
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为什么采用 GaN 的电机驱动器更小、更快、更精准?

随着采用氮化镓(GaN)器件的应用越来越多,Bodo Arlt 借此机会与 EPC公司的首席执行官兼共同创办人 Alex Lidow 谈及他认为这种不断发展的技术的 下一个重点市场。

Bodo’s Power Systems
2021 年 9 月
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Bodo 宽带隙专家演讲 – 氮化镓半导体专题 - 2021 年 6 月

由 Bodo Power Systems 主办的氮化镓行业专家圆桌会议的嘉宾包括:

  1. EPC公司的首席执行官兼共同创始人Alex Lidow
  2. Power Integrations公司的市场营销与应用工程副总裁Doug Bailey
  3. Nexperia 公司的氮化镓功率技术营销战略总监Dilder Chowdhury
  4. Navitas Semiconductor公司的市场营销战略高级总监Tom Ribarich

氮化镓和 碳化硅器件的下一个浪潮

根据将氮化镓和碳化硅材料的电子从价带转移到导带所需的能量,氮化镓和碳化硅器件被指定为宽带隙 (WBG) 半导体——碳化硅器件约为 3.2 eV,氮化镓器件则约为 3.4 eV,而硅器件只有1.1 eV 。WBG 的击穿电压更高,在某些应用中可以达到 1,700 V。 在今年 5 月举行的线上PCIM Europe展会上,几家公司展示了他们在 氮化镓和碳化硅技术方面的最新创新,并就 WBG 技术的发展方向分享了其独特见解。

EE Times – Europe
2021 年 7 月
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Microchip 和 EPC 公司新推抗辐射场效应晶体管以抵抗辐射

航空航天应用的技术发展是 2021 年的重要组成部分,因此更多的抗辐射元件即将问世。 最近新推两款新型场效应晶体管,它们给航太领域带来了什么?

All About Circuits
2021 年 6 月
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用于以电池供电的电机驱动应用且基于氮化镓器件的 1.5kW 逆变器

氮化镓晶体管和集成电路 提高了电机驱动应用的功率密度。最佳布局允许从桥臂分流器或同相分流器获得没有振铃噪声的输出开关波形和“干净“的电流重建信号。

Bodo’s Power Systems
2021 年 6 月
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Product roundup: GaN power semiconductors gain traction

(Image: Yole)

Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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于严峻情况下氮化镓器件如何工作 – 将eGaN FET置于远高于数据手册的电压和电流限值下工作

最近,EPC公司对其氮化镓场效应晶体管(eGaN FET)进行了一系列测试,把它置于超出数据手册的限值下工作,从而量化和发表这些器件通过电压和电流极端应力测试的结果。

Bodo’s Power Systems
2021年5月
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Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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面向电池供电的电机驱动应用并基于氮化镓ePower功率级集成电路的逆变器

氮化镓晶体管和集成电路通过消除输入滤波器中的电解电容,以提高电机驱动应用的功率密度。氮化镓器件的卓越开关性能可消除死区时间且实现无与伦比的正弦电压和电流波形,从而实现更平滑且没有噪声的操作。

Bodo’s Power Systems
2021年4月
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氮化镓(GaN)集成电路重新定义功率转换

氮化镓技术发展迅速,在开发出多代全新分立器件后,具备更高效、更小尺寸和成本更低等优势的新世代集成电路继续崛起。氮化镓集成电路让产品可以更小型化、开关更快、更高效且更易于设计。

Power Systems Design
2021年3月 (第36-39页)
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How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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Laser Driver IC Could Spur Burst Of Activity In Lidar Applications

New family of laser driver IC products will enable faster adoption and increased ubiquity of ToF solutions across a wider array of end-user applications.

How2Power
March, 2021
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Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Enhancement-mode gallium nitride (eGaN) FETs have demonstrated excellent thermomechanical reliability in actual operation in the field or when tested according to AEC or JEDEC standards. This is because of the inherent simplicity of the “package,” the lack of wire bonds, dissimilar materials, or mold compound. Recently, an extensive study of underfill products was conducted to experimentally generate lifetime predictions. A finite element analysis at the end of this section explains the experimental results and generates guidelines for selection of underfill based on key material properties.

Bodo's Power
March, 2021
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