With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
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EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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EPC的GaN专家将在其APEC展位展示各种应用所采用的最新一代GaN FET 和 IC。

宜普电源转换公司(EPC)是增强型氮化镓FET和IC领域的全球领导者，将于3月19日至23日在奥兰多举行的IEEE APEC 2023会议上发表多项技术演讲，详情请参阅下方时间表。此外，我们还会在奥兰治县会议中心的732号展位展示最新一代的 eGaN^®FET和IC，其应用范围包括高功率密度计算、电动汽车、机器人、太阳能、电池充电等。欢迎莅临参观“GaN之墙”,我们提供市场上最广泛的氮化镓功率半导体产品组合，可现成交付。

EPC推出EPC9177，这是一种基于eGaN^®IC的高功率密度、薄型DC/DC转换器参考设计，可满足新型USB PD 3.1对多端口充电器和主板上从28 V~48 V输入电压转换至12 V或20 V输出电压的严格要求。

宜普电源转换公司(EPC)宣布推出EPC9177，这是一款数字控制、单输出同步降压转换器参考设计，工作在 720 kHz 开关频率，可转换 48 V、36 V、28 V至稳压12 V输出电压，并提供可高达20 A的连续输出电流。

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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宜普电源转换公司(EPC)推出 200 V、10 mΩ的EPC2307，完善了额定电压为 100V、150 V和200 V的6个GaN晶体管系列，提供更高的性能、更小的解决方案和易于设计的DC/DC 转换、AC/DC SMPS和充电器、太阳能优化器和微型逆变器，以及电机驱动器。

全球增强型氮化镓FET和IC领导者EPC推出 200 V、10 mΩ的EPC2307，采用耐热增强型QFN封装，占位面积仅为3 mm x 5 mm。

An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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This panel discussion from Electronica 2022 discusses the benefits and challenges for SiC and GaN in multiple application contexts, as well as the last barriers to overcome for widespread adoption, such as large-volume capabilities and prices.

Power Electronic News
January, 2023
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EPC推出 80 V、通过AEC-Q101 认证的氮化镓场效应晶体管（GaN FET）EPC2252，为设计人员提供比硅 MOSFET 更小和更高效的解决方案，用于车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

作为增强型氮化镓 (eGaN^®) FET 和 IC 的全球领导者，宜普电源转换公司（EPC）进一步扩大已有现货供应的车规级氮化镓晶体管系列，推出80 V、11 mΩ、在 1.5 mm x 1.5 mm 封装内提供 75 A 脉冲电流的EPC2252，比硅MOSFET更小和更高效，适用于自动驾驶和其他先进驾驶辅助系统应用中的车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

Aiming at laser time-of-flight lidar, Efficient Power Conversion (EPC) has introduced an 80V 15A pulse laser driver IC.

Electronics Weekly
January, 2023
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宜普电源转换公司(EPC)推出新型氮化镓集成电路EPC21701，这是一款80 V激光驱动器 IC，可提供15 A脉冲电流，适用于飞行时间(ToF)激光雷达应用，包括真空吸尘器、机器人、3D安全摄像头和3D传感。

EPC宣布推出EPC21701，这是一款单芯片激光驱动器，包含80 V、40 A FET、栅极驱动器和3.3逻辑电平输入，用于飞行时间激光雷达系统，包括用于机器人、监控系统和真空吸尘器。它专为用于手势识别、飞行时间 (ToF) 测量、机器人视觉或工业安全的激光雷达系统量身定制。

宜普电源转换公司（EPC）和立锜科技（Richtek）携手推出新型快充参考设计，使用RT6190降压-升压控制器和氮化镓场效应晶体管EPC2204，可实现超过98%的效率。

宜普电源转换公司和立锜科技宣布推出4开关双向降压-升压控制器参考设计，可将12 V~24 V的输入电压转换为5 V~20 V的稳压输出电压，并提供高达5 A的连续电流和6.5 A的最大电流。与高功率密度应用的传统解决方案相比，新型RT6190控制器与EPC的超高效氮化镓场效应晶体管EPC2204相结合，使得解决方案尺寸可缩小20%以上，而且在20 V和12 V输出电压下，可实现超过98%的效率。在不需使用散热器和5 A连续电流下，20 V转5 V的最大升温低于摄氏15度，而12 V转20 V的最高升温则低于摄氏55度。

Richtek, the global leading analog IC design company has teamed up with EPC, the leading provider of gallium nitride (GaN)-based power management technology to launch a new reference design for fast charging applications, achieving high power density and up to 98% efficiency.

DigiTimes
January, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN^® FETs.

Power Electronics News
December, 2022
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EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.