在功率转换、电机驱动和激光雷达等应用中，15 V至350 V范围内的氮化镓（GaN）异质结场效应功率晶体管显示出比硅具有显著优势的，无论是在效率、尺寸、速度和成本方面。这些优势源于关键电场的数量级比硅高出一个数量级，具体而言，尤其是高三倍的带隙方面有3倍的优势，和高1.3倍的电子迁移率方面有1.3倍的优势。

Bodo’s Power Systems
2023年9月
读过的文章

As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
Read article 阅读全文

EPC9159是一款1 kW、48 V/12 V的LLC转换器，占板面积仅为17.5 mm x 22.8 mm，可实现5130 W/in³最先进的功率密度。

宜普电源转换公司(EPC)宣布推出EPC9159参考设计。这是一款48 V/12 V的LLC转换器，专为高功率密度48 V服务器电源和DC/DC转换器而设计。该参考设计可在17.5 mm x 22.8 mm的微小封装内提供高达1 kW的功率，其功率密度为5130 W/in³。这是在初级侧和次级侧电路中采用于高开关频率工作的氮化镓(GaN)功率器件才可以实现的。

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
Read article 阅读全文

GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
Read article 阅读全文

Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low-voltage gallium nitride (GaN) power devices (VDS rating < 200 V) are a promising solution and are being used extensively by an increasing number of solar manufacturers.

In this article, a test-to-fail approach is adopted and applied to investigate the intrinsic underlying wear-out mechanisms of GaN transistors. The study enables the development of physics-based lifetime models that can accurately project the lifetimes under the unique demands of various mission profiles in solar applications.

How2Power
August, 2023
Read article

As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low R_DS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
Read article

汽车电子在过去30年内经历了几个时代的演变。 从主要采用机械或发动机驱动系统的纯内燃机 (ICE)，到添加电力动力的轻度混合动力 (MHEV)，再到全电池电动汽车 (BEV)应用。 在这三个时代中，用于转换和分配电力的架构甚至基本半导体元件都发生了重大的变化。 本文讨论了这个进化过程和对将来进化的方向做出了一些推测。

Power Systems Design
2023年8月
阅读文章

In this article, Renesas Electronics explains how using a discreet GaN based power supply in the ISLVERSALDEMO2Z reference design for the core offers several advantages for power management in space avionics systems.

Power Electronics News
July, 2023
Read article

低压 GaN FET 可实现更小、冷却要求最小化和效率更高的解决方案

与采用传统的硅基功率 MOSFET的应用相比，低压 GaN FET（即 100 V）可实现更小，冷却要求最小化和效率更高的解决方案。 本文讨论了氮化镓器件如何应对动态性能需要重复且可靠的表征的挑战。 定制氮化镓夹具和测试板的机械和电气设计仔细、周全，就可以克服其中许多挑战，使您能够在设计功率转换器时，自信地使用这些新型宽能隙器件。

Power Electronics News
2023年7月
阅读文章

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

Transient voltage overshoot is a common phenomenon in GaN high electron mobility transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric instability under such stress is a critical concern for GaN applications. This work, for the first time, accurately characterized the evolution of dynamic on-resistance (R_DS(on)) in GaN HEMTs under repetitive voltage overshoot up to billions of switching cycles. The dynamic R_DS(on) increase was found to be the dominant device degradation under overvoltage switching. Such findings were obtained from a high-frequency, repetitive, unclamped inductive switching (UIS) test with active temperature control and accurate in-situ R_DS(on) monitoring. A physics-based model was proposed to correlate the dynamic R_DS(on) drift with the peak overvoltage, and a good agreement with experimental data was achieved. This model was further used to project the lifetime of GaN HEMTs. For 100 V rated GaN HEMTs switched under 100 kHz and 120 V spikes, the model projects less than 10% dynamic R_DS(on) shift over 25 years of continuous operation. This work addresses the major concerns of overvoltage switching reliability of GaN HEMTs and provides new insights of the electron trapping mechanism.

IEEE Xplore
Ruizhe Zhang, Ricardo Garcia, Robert Strittmatter, Yuhao zhang, Shengke Zhange
Read article (IEEE subscription required)

2023年7月3日中国商务部宣布8月起对镓、锗相关物项的出口实施管制。宜普电源转换公司的晶圆技术是硅基氮化镓，尽管每个器件中有其微量镓含量，相对全球镓来源广泛，宜普的需求相对较小。我们预计不会出现短期或长期的供应中断。

事实证明，15 V ~ 350 V 氮化镓异质结场效应功率晶体管在功率转换、电机驱动和激光雷达等应用中，无论是在效率、尺寸、速度和成本方面都比硅器件更具优势 。氮化镓集成电路为许多高频应用提供了多方面的系统级优势。 氮化镓集成电路才刚刚发展，其优势肯定会随着其技术发展而不断增强。

Bodo’s Power Systems
2023年6月
阅读文章

宜普电源转换公司(EPC)是增强型氮化镓 (GaN) FET 和 IC产品的领导者，在纽伦堡举行的 PCIM Europe 2023展会上分享了关于氮化镓技术的发展和其应用的演示。 我们与该公司的联合创始人兼首席执行官 Alex Lidow 就电力电子行业和氮化镓技术对行业的影响进行了深度交流。

Electronic Design
2023年5月
观看视频

In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.

Spirit: Behind the Screen
Listen to podcast

案例聚焦新一代替代硅技术

(加利福尼亚州，埃尔塞贡多）--氮化镓（GaN）技术的全球领导者宜普电源转换公司（Efficient Power Conversion Corporation, EPC）于今日向美国联邦法院和美国国际贸易委员会（U.S. International Trade Commission, ITC）提起诉讼，主张其基础专利组合中的四项专利受到英诺赛科（珠海）科技有限公司及其子公司（统称英诺赛科）侵犯。 这些专利涵盖了宜普公司独家的增强型氮化镓功率半导体器件的设计和制造工艺的核心环节。这些专利是创新技术，已成功将基于氮化镓的功率器件从一个研究项目，发展成为一个可大批量生产的替代硅产品。使用氮化镓器件的晶体管和集成电路，较使用硅基器件而言更高效，更小型，成本更低。

Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.

Power Electronics News
May, 2023
Read article

基于氮化镓器件的EPC9186逆变器参考设计增强了高功率应用的电机系统性能、精度、扭矩和可实现更长的续航里程。

宜普电源转换公司(EPC)新推EPC9186，这是一款采用EPC2302 eGaN^®FET的三相BLDC电机驱动逆变器。EPC9186支持14 V~ 80 V的宽输入直流电压。大功率EPC9186支持电动滑板车、小型电动汽车、农业机械、叉车和大功率无人机等应用。

Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverters are becoming the prevailing trend for an increasing number of solar customers, where low voltage GaN power devices (V_DS < 200 V) are extensively used.

Bodo’s Power Systems
May, 2023
Read article