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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage
eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters. EDN Read article 阅读全文
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The Amazing New World of Gallium Nitride

The Amazing New World of Gallium Nitride
From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride. HACKADAY Read article 阅读全文
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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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PCIM Europe – where power is at the core of innovation

PCIM Europe – where power is at the core of innovation
This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009. Electronic Specifier Read article 阅读全文
分类: 技术文章

EPC于欧洲PCIM展会展示基于eGaN 技术、面向汽车、计算机及其他多种应用、具高功率密度的高效DC/DC功率转换

EPC于欧洲PCIM展会展示基于eGaN 技术、面向汽车、计算机及其他多种应用、具高功率密度的高效DC/DC功率转换

宜普电源转换公司(EPC)将于欧洲PCIM展会现场演示优越的氮化镓技术如何提升多种应用所需的电源供电效率,包括运算、通信及运输行业。

EPC团队将于5月7日至9日在德国的Nuremberg、欧洲PCIM展览及研讨会的会场,进行7场关于氮化镓(GaN® )技术及应用的演讲,并于7号馆、335展览摊位与工程师会面并分享最新的、基于eGaN FET及集成电路的终端客户产品。

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车规级80 V EPC2214 eGaN FET 使得激光雷达系统看得更清晰

车规级80 V EPC2214 eGaN FET 使得激光雷达系统看得更清晰

宜普电源转换公司(EPC)进一步扩大车规级氮化镓产品系列 – 全新成员是面向具有高分辨率的激光雷达系统、80 V的EPC2214氮化镓场效应晶体管,该元件成功通过国际汽车电子协会所制定的AEC Q101应力测试认证。

宜普电源转换公司(EPC)宣布再多一个车用氮化镓(eGaN)器件(80 V的EPC2214)成功通过AEC Q101测试认证,可在车用及其它严峻环境支持多种全新应用。

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氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

宜普电源转换公司(EPC)推出两个全新100 V氮化镓器件,可以支持服务器及汽车应用的48 V转换的要求。 我将在处理器、车用及能量存储系统等方面探讨48 V服务器的功率转换解决方案(可参考我的文章 “双向DC/DC电源供电: 我们应该如何取向?”),未来将在EDN文章中看到。氮化镓功率晶体管必需是这些不同架构的一部分 -- 我相信没有其它更优越的元件可以替代氮化镓器件了 。

Planet Analog
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EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer
The "Trilogy of Wireless Power Transfer" consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for ... 阅读全文
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Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion
EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion. EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) ... 阅读全文
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宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

专为功率系统设计师而设的EPC2052功率晶体管是一种100 V、13.5 mΩ并采用超小型芯片级封装的晶体管,可实现74 A脉冲输出电流。面向48 V-12 V DC/DC功率转换器,这些新一代氮化镓场效应晶体管工作在500 kHz频率下,可实现超过97%的效率。如果工作在1 MHz时,则实现超过96%的效率。

宜普电源转换公司(EPC)宣布推出100 V的EPC2052氮化镓场效应晶体管,其占板面积只是2.25平方毫米、最大导通阻抗(RDS(on))为13.5 mΩ及脉冲输出电流高达74 A 以支持高效功率转换。

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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

针对DC/DC、激光雷达(LiDAR)、无线电源及其它很多应用的客户群正在不断地扩大,宜普电源转换公司(EPC)继续其创新之路,在2019年3月及4月里,于全球著名展览会与设计工程师会面并答疑解难,旨在帮助工程师发挥氮化镓技术的优势,携手打造共创共赢的局面。

宜普电源转换公司(EPC)的专家于全球展览会与设计工程师会面,希望加深与氮化镓技术相关的知识交流,使得工程师可以利用基于氮化镓器件的解决方案,创新新一代的设计。

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus
New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions. Power Electronic Tips March, 2019 Read article 阅读全文
分类: 技术文章

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019
EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive. EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology. 阅读全文
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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap
In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN ... 阅读全文
分类: 技术文章

宜普电源转换公司(EPC)的第十阶段可靠性测试报告的亮点是 车规级氮化镓器件超越AEC-Q101应力测试的认证标准

宜普电源转换公司(EPC)的第十阶段可靠性测试报告的亮点是 车规级氮化镓器件超越AEC-Q101应力测试的认证标准

第一至第九阶段可靠性测试报告后,EPC公司的 第十阶段可靠性测试报告进一步丰富知识库。此报告对超过30,000个元件进行了超过1,800万小时的应力测试后,没有器件发生故障。在过去的两年间,我们所付运的数百万个元件没有发生现场失效的情况。

宜普电源转换公司(EPC)发布第十阶段可靠性测试报告,成功通过车规级AEC-Q101应力测试认证。AEC-Q101认证要求功率场效应晶体管符合最高的可靠性标准,不仅仅要求器件符合数据表内所载的条件而没有发生故障,也同时要求在应力测试中,具有低漂移。请注意,EPC所采用的晶圆级芯片规模封装(WLCSP)也符合所有针对传统封装的测试标准,展示出该封装具备卓越性能之同时没有影响到器件的稳固性或可靠性。

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Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users
In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users. EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN ... 阅读全文
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