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25 Autonomous Vehicles Influencers to Follow by 2020

25 Autonomous Vehicles Influencers to Follow by 2020

The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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氮化镓的崛起:硅基氮化镓集成电路重新定义功率转换

氮化镓的崛起:硅基氮化镓集成电路重新定义功率转换

分立式功率晶体管,无论它是硅基还是硅基氮化镓,都进入了最后发展阶段。 硅基氮化镓集成电路可以在较小的占板面积内实现更高的性能,并且显著降低成本和减少所需的器件工程。 本文详细阐析氮化镓器件的崛起和硅基氮化镓集成电路如何重新定义功率转换。

Bodo’s Power Systems
2020年10月
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Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

硅功率MOSFET未能跟上电力电子行业的发展变化,而效率、功率密度和更小的外形尺寸等因素是行业的主要需求。 硅MOSFET器件的性能已达到其理论极限,并且由于电路板的空间非常宝贵,因此功率系统设计人员必需找出替代方案。 氮化镓(GaN)器件是一种高电子迁移率晶体管(HEMT),这种半导体正为新兴应用不断增值。

EETimes
2020年8月
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Podcast: Yes, We GaN: Gallium Nitride and Its Role in Power ICs

Podcast: Yes, We GaN: Gallium Nitride and Its Role in Power ICs

In this inaugural episode, guests are Alex Lidow, CEO of Efficient Power Conversion Corp., and Dinesh Ramanathan, co-CEO of NexGen Power Systems. EPC and NexGen both have expertise with gallium nitride technology and GaN power devices. EETimes speaks with both about the technology and about the market for GaN power devices.

EETimes
August, 2020
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GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
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氮化镓器件缓解了硅器件的问题

氮化镓器件缓解了硅器件的问题

就像生活要面对现实一样,老年人离开舞台而让位给年轻人,硅器件也是需要向现实低头。 随着氮化镓器件的问世和普及,正逐步淘汰旧有可靠的硅器件。 在过去的四十年中,随着功率MOSFET器件的结构、技术和电路拓扑的创新与不断增长的电力需求同步发展,电源管理的效率和成本一直以来得以稳步改善。 但是,在业界发展的新时代,随着硅功率MOSFET器件接近其理论极限,其演进速度下降了很多。 同时,新材料氮化镓的理论性能极限稳步发展,其性能极限比老化的MOSFET器件高出6,000倍,并且比目前市场上最好的氮化镓产品高出300倍。

EEWeb
2020年7 月16日
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虚拟圆桌会议 : 用于D类音频放大器的氮化镓器件与硅器件的比较(第2部分,共2部分)

虚拟圆桌会议 : 用于D类音频放大器的氮化镓器件与硅器件的比较(第2部分,共2部分)

在EEWorld “虚拟圆桌会议” 关于D类音频的讨论的第二部分中,我们的小组成员深入探讨了新兴氮化镓器件(GaN)对D类设计的影响:硅器件在哪方面仍然占主导地位? 在D类放大器中使用GaN的性能优势是什么? D类放大器中GaN与硅的未来预期趋势如何?

参加这个虚拟圆桌会议包括Analog Devices公司音频系统架构师Joshua LeMaire(JL)、 宜普电源转换公司(EPC)战略技术销售副总裁Steve Colino(SC)和 英飞凌(Infineon )D类音频应用工程主管Jens Tybo Jensen(JTJ)。

EEWorld Online
2020年7月
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面向宇航应用的氮化镓晶体管

面向宇航应用的氮化镓晶体管

氮化镓功率晶体管是面向严苛航太任务的功率和射频应用的理想器件。 通过全新基于eGaN®器件的解决方案,EPC Space公司提供专门为商业卫星关键应用而设计的氮化镓器件,可确保器件的耐辐射性能和对单粒子效应的免疫能力。 这些器件具有极高的电子迁移率、低温度系数和非常低的导通阻抗。

EETimes
2020年7月
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硅片已死……分立功率器件快将消失

硅片已死……分立功率器件快将消失

在超过四十年中,随着功率MOSFET器件的结构、技术和电路拓扑的创新,可满足不断增长的电力需求,因此改善了电源管理的效率和成本。 然而,在这新世纪的发展,随着硅功率MOSFET器件已经接近其理论极限,其改进速度已大为减慢。 与此同时,一种全新材料 - 氮化镓(GaN)- 正朝着新的理论性能领域的方向,稳步发展,其性能是老化的MOSFET器件的6,000倍,以及是目前市场的最优越GaN器件的300倍。

EETimes
2020年6月
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Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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Integrated GaN Power Stage for eMobility

Integrated GaN Power Stage for eMobility

Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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GaN Integrated Power Stage – Redefining Power Conversion

GaN Integrated Power Stage –  Redefining Power Conversion

Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Power Product News from ‘Virtual APEC’

Power Product News from ‘Virtual APEC’

Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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氮化镓与48 V应用 – 目前的发展及何去何从?

氮化镓与48 V应用 – 目前的发展及何去何从?

中压氮化镓场效应晶体管(eGaN FET)的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时,EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势,积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构,也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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Gallium Nitride Integration: Breaking Down Technical Barriers Quickly

Gallium Nitride Integration: Breaking Down Technical Barriers Quickly

An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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