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面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

硅功率MOSFET未能跟上电力电子行业的发展变化,而效率、功率密度和更小的外形尺寸等因素是行业的主要需求。 硅MOSFET器件的性能已达到其理论极限,并且由于电路板的空间非常宝贵,因此功率系统设计人员必需找出替代方案。 氮化镓(GaN)器件是一种高电子迁移率晶体管(HEMT),这种半导体正为新兴应用不断增值。

EETimes
2020年8月
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分类: 技术文章

EPC eGaN的性能进一步接近完美功率元件的性能

EPC eGaN的性能进一步接近完美功率元件的性能

宜普电源转换公司(EPC)的第五代(Gen5)产品改善了工艺、性能而同时降低可买到的氮化镓晶体管的成本,以及缩小其芯片和电路板的尺寸。

EPC首席执行官及共同创办人Alex Lidow与他的团队再次发挥专业精神,为设计师提供面向全新市场的独特、可选的、需要比基于硅基器件更高效的功率解决方案。 团队不仅仅在技术方面各有所长,并深入地了解制造工艺的量子力学,从而提高产品性能而同时缩小EPC解决方案的尺寸及降低其成本。

EDN
2017年3月15日
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氮化镓元件制造商EPC公司在实现替代硅基晶片方面大步向前走

氮化镓元件制造商EPC公司在实现替代硅基晶片方面大步向前走

3300亿美元的硅晶片市场是所有电力电子行业的发展基础。但成熟技术引发一轮购并后,该业界的发展步伐缓慢下来。

这就是为什么创新者和主力推动利用氮化镓替代硅材料的Alex Lidow认为目前是氮化镓时代。他的宜普电源转换公司(EPC)推出新一代eGaN晶片,比之前的晶片的尺寸小50%和性能高出很多倍。

VentureBeat
2017年3月15日
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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
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How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1

DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
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Why Consolidation In The Chip Industry Matters To You

Why Consolidation In The Chip Industry Matters To You

If expanding industries typically indicate vibrancy, a race to acquire and consolidate is generally reflective of the opposite – a period of slowed growth in mature, often once high-flying categories. And while many industries experience a period of stardom, followed by a sharp and steady decline, we should be extremely worried when they occur in industries that are fundamentally central to our socio-economic vitality.

Forbes
June 26, 2015
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WiGaN: eGaN FETs in Wide Load Range High Efficiency Wireless Power

Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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如何使用氮化镓器件: 驱动氮化镓场效应晶体管及版图方面的考虑

本专栏已经讨论了氮化镓场效应晶体管的优势及与硅MOSFET器件相比, 它们具备可以实现更高效率及开关速度的潜力。 本章将讨论使用氮化镓场效应晶体管时,在驱动器及版图方面的考虑,以提高性能。

EEWeb
八月份: 驱动氮化镓场效应晶体管及版图方面的考虑

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Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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