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面向多种功率应用的氮化镓晶体管

面向多种功率应用的氮化镓晶体管

硅功率MOSFE追不上目前功率电子业界的演进步伐 -- 业界需要具备高效、高功率密度及细小的外型尺寸的器件。业界看到硅MOSFET已经达到它的理论极限,从而需要找出全新器件。氮化镓(GaN)是一种HEMT器件,具备附加增值的优势,被证明为可以支持全新应用的要求。

Power Electronics News
2020年3月25日
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分类: 技术文章

氮化镓(GaN)技术的最新发展是什么?

氮化镓(GaN)技术的最新发展是什么?

著名企业领袖 - 宜普电源转换公司(EPC)首席执行官Alex Lidow于2009年在市场推出第一个氮化镓晶体管。 经过了10年的氮化镓产品销售,DESIGN & ELEKTRONIK 杂志编辑Ralf Higgelke与Alex会面并谈论氮化镓技术的最新发展。

DESIGN & ELEKTRONIK杂志
2020年2月20日
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分类: 技术文章

Development Boards Make Evaluating eGaN FETs Simple

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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宜普电源转换公司(EPC)将于GOMACTech研讨会与工程师分享采用氮化镓(eGaN®)晶体管的直流-直流转换器工作在10 MHz频率、峰值效率为89%并可在严峻环境下工作

宜普公司首席执行官及共同创办人Alex Lidow 将与工程师分享专为工作在10 MHz频率范围而设的全新增强型氮化镓(eGaN®)高电子迁移率晶体管系列,由于这些晶体管在经过辐射照射后仍然具高可靠性,因此它们是高可靠性应用的理想器件。

硅基增强型功率氮化镓场效应晶体管之全球领导厂商宜普电源转换公司将在四月三日于美国南卡羅來納州的Charleston市举行的第39届GOMACTech年度研讨会演讲。

自2010年以来,增强型氮化镓晶体管已作 商业用途 ,并大大地提高商用及使用不同拓扑及功率级的DC-DC转换器的效率。此外,该晶体管也被展示了可 抵受很高伽玛剂量的辐照并通过单次事件效应(SEE)测试。 与耐受辐照的功率MOSFET器件相比,氮化镓场效应晶体管可改善影响开关性能的品质因数达40倍,使得宇航级供电应用设计师可实现商用先进系统的效率。

Alex Lidow称「我们很高兴藉着这个机会与工程师分享宜普公司最新一代高性能氮化镓功率晶体管以及这些器件经过辐照测试后所取得的优异成绩。专为在数MHz频率开关的转换器应用而设的硅基氮化镓功率晶体管可帮助设计耐辐射系统的工程师实现与商用先进系统一样的功率密度及效率。」

关于2014年GOMACTech 研讨会

GOMACTech 旨在为政府系统中的微电路应用复审其开发项目。于1968年开始,该研讨会主要关注由国防部及其他政府机构所开发的系统的进程,并公布政府在微电子发展方面的重要建议如VHSIC及MIMIC,以及作为政府复审项目的平台。

 

宜普电源转换公司简介

宜普公司是基于增强型氮化镓的功率管理器件的领先供应商,为首家公司推出替代功率MOSFET器件的硅基增强型氮化镓(eGaN)场效应晶体管,其目标应用包括 直流- 直流转换器无线电源传送包络跟踪、射频传送、太阳能微型逆变器、 光学遥感技术(LiDAR)D类音频放大器 等应用,器件性能比最好的硅功率MOSFET高出很多倍。详情请浏览 我们的网站www.epc-co.com.cn 。

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商标

eGaN® 是Efficient Power Conversion Corporation宜普电源转换公司的注册商标。

媒体联络人

Winnie Wong ( [email protected])

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分类: 新闻稿

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications.

EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

“It is noteworthy that the Darnell Energy Summit has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their conference. This selection continues to demonstrate the superior performance of GaN technology has gained the interest and acceptance of those interested in improving energy efficiency,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Presenter: Alex Lidow and David Reusch
Monday, September 9th (9:00 a.m. – 12:30 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will also discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical Presentations by EPC Experts Featuring GaN FETs:

• Plenary Session 
“GaN: Crushing Silicon One Application at a Time”
Presenter: Alex Lidow
​Tuesday, September 10th (Session 2.1, 1:45 p.m.)

• Technical Sessions 
“eGaN®FETs for High Frequency Hard-Switching Converters”
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分类: 新闻稿