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EPC新推80 V和200 V eGaN FET,扩大其高性能eGaN系列的产品阵容

EPC新推80 V和200 V eGaN FET,扩大其高性能eGaN系列的产品阵容

这些新一代氮化镓场效应晶体管(eGaN FET) 满足了目前电动出行(eMobility)、交付和物流机器人,以及无人机市场所需的紧凑型 BLDC 电机驱动器和具成本效益、高分辨率的飞行时间(ToF)的新需求。

宜普电源转换公司(EPC)是增强型硅基氮化镓 (eGaN) 功率 晶体管和集成电路的全球领导者。新推的EPC2065 和 EPC2054具备更高的性能和更低的成本等优势。

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Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

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EPC公司将在2021年APEC虚拟会议暨博览会上,展示在多种应用中 使用eGaN FET和集成电路的高功率密度解决方案

EPC公司将在2021年APEC虚拟会议暨博览会上,展示在多种应用中 使用eGaN FET和集成电路的高功率密度解决方案

宜普电源转换公司(EPC) 的氮化镓专家将在APEC展示最新的增强型氮化镓场效应晶体管和集成电路的发展,并探讨氮化镓技术的卓越性能如何改变了具高功率密度的计算、车载、电动运输和机器人等应用的电源供电。

EPC团队将在6月14日至17 日举行的APEC虚拟会议暨博览会上,进行多个关于氮化镓 (GaN) 技术和应用的技术演示和网络研讨会,并且提供相关的教育教程。此外,EPC公司也参加了此次活动的虚拟展览,展示出其客户的终端产品中采用了最新的 eGaN FET和集成电路,从而推动了氮化镓(eGaN)技术的普及。

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EPC推出超高功率密度1226 W/in3、1 kW的48 V/12 V LLC转换器

EPC推出超高功率密度1226 W/in3、1 kW的48 V/12 V LLC转换器

宜普电源转换公司(EPC)宣布推出新型EPC9149演示板。该板为一款可提供1 kW功率的48 V输入、12 V输出的LLC转换器,可作为直流变压器,转换比为4:1。EPC9149采用额定电压为100 V的EPC2218氮化镓场效应晶体管(eGaN FET)和额定电压为40 V的EPC2024

EPC9149的尺寸是根据DOSA标准的1/8砖型,仅为58.4 mm x 22.9 mm。输出功率是1 kW时,EPC9149比基于硅器件的解决方案要小得多,后者的尺寸通常是1/4砖或大两倍。不带散热器的转换器的总厚度仅为10 mm。为了让工程师能够轻松地复制这个设计,该电路板的所有设计资源,包括原理图、物料清单和Gerber文档,都可以在EPC网站上找到。

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EPC推出由氮化镓场效应晶体管驱动且可扩展的 1.5 kW 48 V/12 V DC/DC演示板,为轻度混合动力汽车和电池备用装置提供更高效、更小、更快的双向转换器

EPC推出由氮化镓场效应晶体管驱动且可扩展的 1.5 kW 48 V/12 V DC/DC演示板,为轻度混合动力汽车和电池备用装置提供更高效、更小、更快的双向转换器

EPC9137是一款两相的48 V/12 V双向转换器,以小型化解决方案提供1.5 kW功率,效率为97%,适用于轻度混合动力汽车和电池电源备用装置。

宜普电源转换公司(EPC)宣布推出EPC9137,这是一款1.5 kW的两相48 V/12 V双向转换器,占板面积小,效率为97%。该演示板的设计是可扩展的–并联两个转换器可实现3 kW,或者并联3个转换器可实现4.5 kW。该板使用4个100 V的eGaN®FET(EPC2206),并由一个包括Microchip dsPIC33CK256MP503 16位数字控制器的模块控制。

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Product roundup: GaN power semiconductors gain traction

(Image: Yole)

Product roundup: GaN power semiconductors gain traction

Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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EPC公司推出用于更高效、运行更安静和尺寸更小的电机 且基于氮化镓集成功率级的400 W电机驱动器演示板

EPC公司推出用于更高效、运行更安静和尺寸更小的电机 且基于氮化镓集成功率级的400 W电机驱动器演示板

EPC9146演示板展示EPC2152 ePower™功率級使能高性能且低成本的BLDC電機,從而實現具有更高的性能和更小型化的解決方案。

宜普电源转换公司(EPC)宣布推出400 W电机驱动演示板(EPC9146),包含三个独立控制的半桥电路,采用集成了栅极驱动器的单片式EPC2152EPC2152 ePower™功率级,其最大电压为80 V和最大输出电流为15 A(10 ARMS)。板的尺寸仅为81 mm x 75 mm,在输出功率为400 W时,可实现超过98.4%的效率。

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于严峻情况下氮化镓器件如何工作 – 将eGaN FET置于远高于数据手册的电压和电流限值下工作

于严峻情况下氮化镓器件如何工作 – 将eGaN FET置于远高于数据手册的电压和电流限值下工作

最近,EPC公司对其氮化镓场效应晶体管(eGaN FET)进行了一系列测试,把它置于超出数据手册的限值下工作,从而量化和发表这些器件通过电压和电流极端应力测试的结果。

Bodo’s Power Systems
2021年5月
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Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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面向电池供电的电机驱动应用并基于氮化镓ePower功率级集成电路的逆变器

面向电池供电的电机驱动应用并基于氮化镓ePower功率级集成电路的逆变器

氮化镓晶体管和集成电路通过消除输入滤波器中的电解电容,以提高电机驱动应用的功率密度。氮化镓器件的卓越开关性能可消除死区时间且实现无与伦比的正弦电压和电流波形,从而实现更平滑且没有噪声的操作。

Bodo’s Power Systems
2021年4月
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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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氮化镓(GaN)集成电路重新定义功率转换

氮化镓(GaN)集成电路重新定义功率转换

氮化镓技术发展迅速,在开发出多代全新分立器件后,具备更高效、更小尺寸和成本更低等优势的新世代集成电路继续崛起。氮化镓集成电路让产品可以更小型化、开关更快、更高效且更易于设计。

Power Systems Design
2021年3月 (第36-39页)
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How GaN Integrated Circuits Are Redefining Power Conversion

How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Enhancement-mode gallium nitride (eGaN) FETs have demonstrated excellent thermomechanical reliability in actual operation in the field or when tested according to AEC or JEDEC standards. This is because of the inherent simplicity of the “package,” the lack of wire bonds, dissimilar materials, or mold compound. Recently, an extensive study of underfill products was conducted to experimentally generate lifetime predictions. A finite element analysis at the end of this section explains the experimental results and generates guidelines for selection of underfill based on key material properties.

Bodo's Power
March, 2021
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宜普电源转换公司(EPC)eToF 激光驱动器IC 助力革新激光雷达系统设计

宜普电源转换公司(EPC)eToF 激光驱动器IC 助力革新激光雷达系统设计

宜普电源转换公司(EPC)推出首个氮化镓(GaN)集成电路(IC)系列,实现性能更高、更小巧且采用飞行时间(ToF)技术的激光雷达应用,包括机器人、无人机、3D传感器和自动驾驶汽车等应用。

宜普电源转换公司(EPC)宣布推出激光驱动器IC(EPC21601),在单个芯片上集成了40 V、10 A 场效应晶体管、栅极驱动器和3.3 V逻辑电平输入,面向飞行时间(ToF)激光雷达系统,用于机器人、监控保安系统、无人机、全自动驾驶汽车和吸尘器。

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