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EPC公司进一步更新了其广受欢迎的 氮化镓(GaN)功率晶体管及集成电路的播客系列

EPC公司进一步更新了其广受欢迎的 氮化镓(GaN)功率晶体管及集成电路的播客系列

宜普电源转换公司(EPC)依据《氮化镓晶体管–高效功率转换器件》第三版教科书的增订内容,更新了首7个、合共14个教程的视频播客,与工程师分享采用氮化镓场效应晶体管及集成电路的理论、设计基础及应用,例如激光雷达、DC/DC转换及无线电源等应用。

宜普电源转换公司(EPC)更新了其广受欢迎的“如何使用氮化镓器件”的视频播客系列。该视频系列的内容是依据最新出版的《氮化镓晶体管–高效功率转换器件》.第三版教科书的内容制作。合共14个教程的视频播客系列旨在为功率系统设计工程师提供技术基础知识及针对专有应用的工具套件,从而让工程师学习如何采用氮化镓晶体管及集成电路,设计出更高效的功率转换系统。

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EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

The "Trilogy of Wireless Power Transfer" consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for instance. The third part is dedicated to practical applications. This includes applications within the scope of the Qi standard, as well as examples of proprietary solutions. An overview of EMI-relevant topics for closely and loosely coupled systems, as well as an example of a multimode wireless power transmission system round out the practical part. The authors of the "Trilogy of Wireless Power Transfer" are Cem Som, Division Manager Wireless Power Transfer at Würth Elektronik eiSos; and Dr. Michael de Rooij, Vice President Applications Engineering at Efficient Power Conversion Corporation, Inc. The book costs 19 euros and can be ordered from Würth Elektronik eiSos or through bookstores.

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How eGaN FETs power LIDAR

How eGaN FETs power LIDAR

LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification

As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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Best Practices for Integrating eGaN FETs

Best Practices for Integrating eGaN FETs

Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
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IEEE电力电子学会(PELS)在线研讨会: “充分发挥采用芯片级封装的氮化镓晶体管及集成电路的优势”

IEEE电力电子学会(PELS)在线研讨会: “充分发挥采用芯片级封装的氮化镓晶体管及集成电路的优势”

IEEE电力电子学会( PELS)将于2016年11月3日(星期四)举行在线研讨会,届时将由Alex Lidow及Michael de Rooij主讲并与参加者分享采用芯片级封装的氮化镓功率器件的设计及PCB制造方法。

氮化镓技术领袖宜普电源转换公司(EPC)的专家将于美国东部夏令时间(EDT)11月3日(星期四)早上11时至中午12时于IEEE电力电子学会( PELS)在线研讨会中与工程师分享如何设计及使用氮化镓晶体管。

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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
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Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

In this installment, we present a method to design a suitable EMI filter that can reduce unwanted frequencies to levels within radiated EMI specifications, and do this without negatively impacting the performance of the wireless power coil. In addition, the overall radiated EMI design aspects will also be covered.

EEWeb - Wireless & RF Magazine
Michael de Rooij, Ph.D.
February, 1, 2016
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分类: 技术文章

Getting from 48 V to load voltage

Getting from 48 V to load voltage

Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
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分类: 技术文章

How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1

DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
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宜普电源转换公司(EPC)出版关于如何发挥氮化镓晶体管优势的实用指南--《DC/DC转换手册》

宜普电源转换公司(EPC)出版关于如何发挥氮化镓晶体管优势的实用指南--《DC/DC转换手册》

宜普公司的《DC/DC转换手册》与工程师分享如何在数据通信设备及其它功率转换应用中利用氮化镓(GaN)功率晶体管提高效率及功率密度。

现今世界对信息的需求史无前例地快速增长,而社会对通信、计算及下载技术的渴求进一步驱使我们对信息的需求量上升。新兴技术诸如云端运算及物联网的出现,加上全球每分钟估计有高达300小时的录像被上载至YouTube平台,可见要求更多、更快速的信息存取的趨势不会慢下来。这个挑战推动了我们编撰这本实用工程知识手册--《DC/DC转换-《氮化镓晶体管—高效功率转换器件》的增刊 》

本书阐述功率转换系统如何持续改善,从而跟上正在快速提升的运算能力的发展步伐,以及应对社会对高效数据中心的需求。此外,本书的焦点是如何发挥高效氮化镓技术并逐步分析如何利用氮化镓器件设计出高效的功率转换解决方案。该分析对用于功率转换系统中的传统先进硅功率晶体管和氮化镓晶体管进行比较。

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Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs.

By: Ivan Chan & David Reusch, Ph.D.
EEWeb –Modern Printed Circuits
August, 2015
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