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25 Autonomous Vehicles Influencers to Follow by 2020

25 Autonomous Vehicles Influencers to Follow by 2020

The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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与硅MOSFET相比,宜普电源转换公司(EPC)最新推出的100 V eGaN FET产品系列 为业界树立了全新的性能基准

与硅MOSFET相比,宜普电源转换公司(EPC)最新推出的100 V eGaN FET产品系列 为业界树立了全新的性能基准

新一代100 V 氮化镓场效应晶体管(eGaN® FET)是48 VOUT同步整流、D类音频放大器、汽车信息娱乐及激光雷达系统的理想功率器件。

增强型硅基氮化镓(eGaN)功率场效应晶体管和集成电路的全球领导厂商宜普电源转换公司(EPC)最新推出的两款100 V eGaN FET(EPC2218EPC2204),性能更高并且成本更低,可立即发货。采用这些先进氮化镓器件的应用非常广阔,包括同步整流器、D类音频放大器、汽车信息娱乐系统、DC/DC转换器(硬开关和谐振式)和面向全自动驾驶汽车、机械人及无人机的激光雷达系统

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EPC to Showcase High Power Density eGaN FETs and ePower Stage IC in Customer Applications at PCIM Europe 2020 Digital Days

EPC to Showcase High Power Density eGaN FETs and ePower Stage IC in Customer Applications at PCIM Europe 2020 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest ePower™ Stage IC family of products showing how GaN technology’s superior performance is transforming power delivery for computing, communications, robotics, and transportation at the PCIM Europe 2020 Digital Days.

EL SEGUNDO, Calif.— June 2020 — The EPC team will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, July 7 – 8. In addition, the company will participate in the event’s virtual exhibit, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

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Go-ahead for GaN

Go-ahead for GaN

It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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设计激光雷达应用及进一步应用于全自动电动车方程式E赛车

设计激光雷达应用及进一步应用于全自动电动车方程式E赛车

eGaN FET(及目前的集成电路)之可以应用于全自动车辆的激光雷达系统,以及全自动电动赛车,是因为这些器件可以实现高很多的分辨率(由于具备超短激光脉冲)、更快速的图像速度(由于短激光脉冲),及可以准确地看得更远(由于在超高电流时可以实现快速激光脉冲)。

Planet Analog
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Why experts believe cheaper, better lidar is right around the corner

Why experts believe cheaper, better lidar is right around the corner

This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

EPC2040, an eGaN® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

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How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

Light detection and ranging (lidar) is a versatile light-based remote sensing technology that recently has been the subject of great attention. It has shown up in a number of media venues and has even led to public debate about the engineering choices of a well-known electric car company, Tesla Motors. While this article is not going to enter the fray, it will provide some background on lidar and discuss its strong connection to power electronics technologies.

Published in: IEEE Power Electronics Magazine ( Volume: 4, Issue: 1, March 2017 )
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Tech Blog Writer 播客 #180 – 为什么氮化镓技术即将颠覆硅技术?

Tech Blog Writer 播客 #180 – 为什么氮化镓技术即将颠覆硅技术?

宜普电源转换公司(EPC)于本年1月在拉斯维加斯举行的CES 2017展览演示氮化镓(GaN)如何成为全自动驾驶车辆背后的重要技术、没有电源线的未来家居、联网汽车及药丸内含微型X光系统以非侵入式方法进行结肠镜检查。可以替代半导体业界最常用的硅器件是一种名为氮化镓(GaN)的全新材料,而性能更优越的EPC的GaN器件名为eGaN器件。硅技术帮助Intel公司建立其王国,它有可能被GaN替代吗?你将从本播客知道更多。硅技术在数字时代的日子将不会长久,而各家公司必需颠覆破坏其对手,抑或是被颠覆破坏。喜欢技术及希望知道业界发展方向的朋友会喜欢本播客。嘉宾资料:Alex Lidow博士是EPC公司的首席执行官兼共同创办人。他会为大家解答氮化镓是什么、为何使用氮化镓技术及该技术何去何从等问题。

收听访问内容
Tech Blog Writer 播客
2017年1月 20日

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宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州Blacksburg的eGaN FET及 IC应用中心落成启用并聘任Suvankar Biswas博士为高级应用工程师

宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州Blacksburg的eGaN FET及 IC应用中心落成启用并聘任Suvankar Biswas博士为高级应用工程师

宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州Blacksburg的eGaN® FET及 IC应用中心落成启用并聘任Suvankar Biswas博士为高级应用工程师

宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州(Virginia)的Blacksburg应用中心落成。该中心进一步支持增强型氮化镓晶体管及集成电路的研发及应用,从而扩大潜在市场的覆盖率。除了基于传统的场效应晶体管及集成电路的功率转换应用外,氮化镓技术推动新兴应用的出现,包括无线电源传输、应用于全自动驾驶车辆的激光雷达技术及 支持4G和5G通信标准的包络跟踪应用。

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Podcast: Bloomberg Radio Interview with Alex Lidow at CES 2017

Podcast: Bloomberg Radio Interview with Alex Lidow at CES 2017

EPC CEO and Co-Founder, Alex Lidow, discusses the life changing applications on display at CES with Bloomberg Radio. Applications such as LiDAR for autonomous cars with the potential to disrupt the transportation industry and wireless power with the potential to eliminate power cords are highlighted as well as how GaN enables these new technologies.

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Bloomberg
January, 2017

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与MOSFET相比,基于eGaN FET的开发板展示出eGaN FET具备超快速的转换速度特性,在自动驾驶汽车可实现优越的激光雷达(LiDAR)系统性能

与MOSFET相比,基于eGaN FET的开发板展示出eGaN FET具备超快速的转换速度特性,在自动驾驶汽车可实现优越的激光雷达(LiDAR)系统性能

EPC9126开发板基于具备超快速的转换速度特性的eGaN® FET,可通过大电流脉冲及低至5 ns的总脉宽来驱动激光二极管,从而提高激光雷达系统的侦测资料的质素,包括侦测资料的准确度、精准度及处理速度。

宜普电源转换公司(EPC)宣布推出EPC9126评估板。该板是基于100 V大电流脉冲激光电源设计,可驱动激光二极管。在自动驾驶汽车的激光雷达系统中,侦测目标物件的速度及准确性非常重要。EPC9126评估板展示eGaN FET具备快速转换速度的特性,与等效MOSFET相比,eGaN FET可以高达快十倍的速度提供功率脉冲来驱动激光二极管,从而提高LiDAR系统的整体性能。

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采用雷达及照相机并不足够,激光雷达(LiDAR)才是确保自动驾驶车的安全性能的关键技术。

采用雷达及照相机并不足够,激光雷达(LiDAR)才是确保自动驾驶车的安全性能的关键技术。

提供驱动Tesla半自动Autopilot驾驶技术的供应商的首席技术官相信,汽车制造商的设计超过了安全极限。

总部设于以色列的Mobileye NV公司首席技术官及执行主席Amnon Shashua在星期三跟Reuters说“目前汽车设计并没有预计所有会导致车祸的情况,确保其安全性”。

Computerworld
2016年9月15日
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宜普电源转换公司(EPC)推出面向扩增实景和全自动驾驶汽车应用 的全新eGaN FET,实现极高的分辨率

宜普电源转换公司(EPC)推出面向扩增实景和全自动驾驶汽车应用 的全新eGaN FET,实现极高的分辨率

全新的EPC2040氮化镓场效应晶体管(eGaN®FET)具备超快速开关性能,可以支持需要更高分辨率及准确性、使用脉冲式镭射驱动器的应用,诸如在扩增实景(augmented reality)系统及全自动驾驶汽车中,利用光学遥感技术(LiDAR )、三维感测的导航系统。

宜普电源转换公司宣布推出EPC2040功率晶体管,它是一种超小型、具备快速开关性能的氮化镓功率晶体管,面向高速终端应用,可实现优越的分辨率、更快速的响应时间及更高准确度。此外,由于在整个工作温度范围内,器件具有高准确度门限,因此当镭射受热,可确保系统的稳定性。例如该晶体管在LiDAR 技术所采用的脉冲式镭射驱动器是理想的器件。LiDAR技术是全自动驾驶汽车的导航系统及扩增实景平台的重要技术。EPC2040的优越性能在这些系统中可以实现更高准确度及分辨率。

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