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面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

硅功率MOSFET未能跟上电力电子行业的发展变化,而效率、功率密度和更小的外形尺寸等因素是行业的主要需求。 硅MOSFET器件的性能已达到其理论极限,并且由于电路板的空间非常宝贵,因此功率系统设计人员必需找出替代方案。 氮化镓(GaN)器件是一种高电子迁移率晶体管(HEMT),这种半导体正为新兴应用不断增值。

EETimes
2020年8月
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分类: 技术文章

面向宇航应用的氮化镓晶体管

面向宇航应用的氮化镓晶体管

氮化镓功率晶体管是面向严苛航太任务的功率和射频应用的理想器件。 通过全新基于eGaN®器件的解决方案,EPC Space公司提供专门为商业卫星关键应用而设计的氮化镓器件,可确保器件的耐辐射性能和对单粒子效应的免疫能力。 这些器件具有极高的电子迁移率、低温度系数和非常低的导通阻抗。

EETimes
2020年7月
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EPC和VPT宣布成立合资公司EPC Space 面向关键任务应用的耐辐射功率电子市场

EPC和VPT宣布成立合资公司EPC Space 面向关键任务应用的耐辐射功率电子市场

面向关键宇航应用及其它高可靠性应用环境,合资公司EPC Space为客户提供先进、高可靠性的氮化镓功率转换解决方案,从而确保更可靠的操作和任务成功。

宜普电源转换公司(EPC)与VPT公司(海科航空公司旗下公司、NYSE交易代号为HEI.A及HEI)宣布成立合资公司EPC Space LLC,针对卫星及高可靠性应用,从事设计和制造耐辐射、采用封装、通过测试和经认证合格的硅基氮化镓晶体管和集成电路。

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GaN in Space

GaN in Space

This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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GaN Powers Small Satellites

GaN Powers Small Satellites

Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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Intersil采用氮化镓功率转换集成电路,进一步扩大其业界领先、面向卫星应用的耐辐射产品系列

Intersil采用氮化镓功率转换集成电路,进一步扩大其业界领先、面向卫星应用的耐辐射产品系列

美国加州MILPITAS - 2016年5月 25日美通社专讯 --占领电源管理和精确模拟解决方案的市场领导地位的Intersil Corporation (纳斯达克指数NASDAQ代号: ISIL) 宣布计划进一步扩大其业界领先、面向卫星应用的耐辐射产品系列,在卫星及其它恶劣环境采用具备高可靠性的氮化镓(GaN)功率转换集成电路。

美通社
2016年5月25日
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Freebird Semiconductor Partners with EPC for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications

Freebird Semiconductor Partners with EPC for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications

Freebird Semiconductor and Efficient Power Conversion (EPC) have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN® power transistors and integrated circuits.

NORTH ANDOVER, MA. — April 2016 — Freebird Semiconductor Corporation, North Andover, Massachusetts announces the signing of an agreement with Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaN® technology.

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