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jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

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The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion
In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs. Power Systems Designs By Edward A. Jones, Michael de Rooij, and David Reusch Read article 阅读全文
分类: 技术文章

宜普电源转换公司(EPC)的专家携手与工程师发挥氮化镓器件及集成电路的最高性能,不仅替代MOSFET器件,更为市场带来创新设计

宜普电源转换公司(EPC)的专家携手与工程师发挥氮化镓器件及集成电路的最高性能,不仅替代MOSFET器件,更为市场带来创新设计

EPC公司将在3月14至16日于中国深圳及上海各大论坛及展会亮相,展示氮化镓技术的卓越性能如何为整个半导体业界带来全新电源转换设计思路,包括无线充电、DC/DC、激光雷达及汽车等应用领域。

EPC公司的管理及技术团队将在中国深圳及上海于3月14至16日举行的各大业界论坛及展会上,与工程师会面并作技术交流。届时,EPC团队将分享如何发挥氮化镓场效应晶体管(GaN FET)及集成电路的最高性能、创新设计,从而为工程师及其客户,打造共创共赢新局面。

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost
EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size. EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and ... 阅读全文
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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion
Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits. EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the ... 阅读全文
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Why experts believe cheaper, better lidar is right around the corner

Why experts believe cheaper, better lidar is right around the corner
This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars. The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within ... 阅读全文
分类: 技术文章

eGaN技术的可靠性及器件失效的物理原因 - 栅极电压应力测试

eGaN技术的可靠性及器件失效的物理原因 - 栅极电压应力测试

本系列的第四章中,我们探讨了采用晶圆级芯片规模封装的eGaN器件的热机械可靠性。同样重要的是,我们需要了解有栅极偏置时,器件有可能发生的故障模式。本章探讨氮化镓(GaN)场效应晶体管的栅极在偏置电压时失效的物理原因。我们把eGaN FET的栅极控制电压提升至特定的最大极限值和极限值以上,从而分析该器件在失效前的性能。

Planet Analog
Chris Jakubiec
2016年11月29日
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博客(4):eGaN技术的可靠性及器件失效的物理原因

博客(4):eGaN技术的可靠性及器件失效的物理原因

在本系列的第一、二及第三章中,我们详细讲解了关于EPC增强型氮化镓场效应晶体管(eGaN FET)及集成电路(IC)的现场可靠性及它们被认证通过应力测试。在应用中,我们把器件置于预期的工作条件下并施加应力,其测试结果引证了氮化镓器件的现场可靠性。同样重要的是了解 eGaN器件固有的物理特性,它如何在被施加应力后并超出预期工作条件时(例如数据表的参数及安全工作区(SOA))而失效。本章将进一步深入探讨失效的物理原因 -- 采用晶圆级芯片规模封装(WLCSP)的eGaN器件的热机械可靠性。

Planet Analog
Chris Jakubiec
2016年9月7日
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博客(3):eGaN技术的可靠性及器件失效的物理原因

博客(3):eGaN技术的可靠性及器件失效的物理原因

在本系列的第一及第二章,我们详细讲解了关于EPC的增强型氮化镓场效应晶体管(eGaN®FET)及集成电路(IC)的现场可靠性报告。具备优越的现场可靠性的eGaN器件展示出通过基于应力的认证测试可确保客户的应用也可以非常可靠。本章将阐释EPC器件在认证之前被置于及通过的各种应力测试。

Planet Analog
Chris Jakubiec
2016年7月9日
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eGaN技术的可靠性及元件失效的物理原因–确证eGaN FET的现场可靠性

eGaN技术的可靠性及元件失效的物理原因–确证eGaN FET的现场可靠性

宜普电源转换公司(EPC)的增强型氮化镓场效应晶体管(eGaN® FET)及集成电路正在驱动最终用户应用的发展,包括LiDAR、无线充电、DC/DC电源转换、射频发射基站、卫星系统及音频放大器等应用。

从现场可靠性数据可以确证eGaN® FET及集成电路于客户应用的品质。在本章节,我们分享eGaN FET的可靠性及现场数据的概述,包括在过去六年间我们对量产及已经付运的eGaN产品所收集的可靠性现场数据,以及分析超过170亿小时受测器件的现场数据。最后所得的FIT比率(109小时内发生失效的器件)大约是0.24,这是目前最好的现场可靠性测试结果。

Plant Analog
作者:Chris Jakubiec
2016年5月1 日
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