宜普电源转换公司（EPC）推出首个氮化镓（GaN）集成电路（IC）系列，实现性能更高、更小巧且采用飞行时间（ToF）技术的激光雷达应用，包括机器人、无人机、3D传感器和自动驾驶汽车等应用。

宜普电源转换公司（EPC）宣布推出激光驱动器IC(EPC21601)，在单个芯片上集成了40 V、10 A 场效应晶体管、栅极驱动器和3.3 V逻辑电平输入，面向飞行时间（ToF）激光雷达系统，用于机器人、监控保安系统、无人机、全自动驾驶汽车和吸尘器。

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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宜普电源转换公司（EPC）推出全新集成电路(IC)系列的首个产品，为高功率密度应用诸如DC/DC转换、电机驱动及D类放大器，提供更高性能及更小型化的解决方案。

宜普电源转换公司（EPC）宣布推出80 V、12.5 A的功率级集成电路，专为48 V DC/DC转换而设计，用于具有高功率密度的运算应用及针对电动车的电机驱动器。

本文阐析面向12 V输入电压转到1 V输出电压的负载点转换器，如果采用与氮化镓场效应晶体管匹配的驱动器，可以显著提升性能。从文章中展示的uPI1966D设计范例可以看到，EPC公司的不对称氮化镓半桥场效应晶体管EPC2100与uPI半导体公司的双通道同步驱动器集成电路是非常匹配的。

How2Power Today
2019年12月
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Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

宜普电源转换公司的基于氮化镓的器件乃前沿技术。在本视频，宜普公司的首席执行官Alex Lidow于APEC展会现场与 Alix Paultre分享多个design in项目，从而展示基于氮化镓的器件的各种优势。

宜普电源转换公司首席执行官兼共同创办人Alex Lidow于APEC 2019展览会的Ridley Engineering展览摊位进行演讲，题目是“硅已经死亡”。

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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EPC公司将在3月14至16日于中国深圳及上海各大论坛及展会亮相，展示氮化镓技术的卓越性能如何为整个半导体业界带来全新电源转换设计思路，包括无线充电、DC/DC、激光雷达及汽车等应用领域。

EPC公司的管理及技术团队将在中国深圳及上海于3月14至16日举行的各大业界论坛及展会上，与工程师会面并作技术交流。届时，EPC团队将分享如何发挥氮化镓场效应晶体管（GaN FET）及集成电路的最高性能、创新设计，从而为工程师及其客户，打造共创共赢新局面。

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN^® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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本系列的第四章中，我们探讨了采用晶圆级芯片规模封装的eGaN器件的热机械可靠性。同样重要的是，我们需要了解有栅极偏置时，器件有可能发生的故障模式。本章探讨氮化镓（GaN）场效应晶体管的栅极在偏置电压时失效的物理原因。我们把eGaN FET的栅极控制电压提升至特定的最大极限值和极限值以上，从而分析该器件在失效前的性能。

Planet Analog
Chris Jakubiec
2016年11月29日
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在本系列的第一、二及第三章中，我们详细讲解了关于EPC增强型氮化镓场效应晶体管(eGaN FET)及集成电路(IC)的现场可靠性及它们被认证通过应力测试。在应用中，我们把器件置于预期的工作条件下并施加应力，其测试结果引证了氮化镓器件的现场可靠性。同样重要的是了解 eGaN器件固有的物理特性，它如何在被施加应力后并超出预期工作条件时（例如数据表的参数及安全工作区(SOA)）而失效。本章将进一步深入探讨失效的物理原因 -- 采用晶圆级芯片规模封装（WLCSP）的eGaN器件的热机械可靠性。

Planet Analog
Chris Jakubiec
2016年9月7日
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在本系列的第一及第二章，我们详细讲解了关于EPC的增强型氮化镓场效应晶体管(eGaN^®FET)及集成电路(IC)的现场可靠性报告。具备优越的现场可靠性的eGaN器件展示出通过基于应力的认证测试可确保客户的应用也可以非常可靠。本章将阐释EPC器件在认证之前被置于及通过的各种应力测试。

Planet Analog
Chris Jakubiec
2016年7月9日
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宜普电源转换公司（EPC）的增强型氮化镓场效应晶体管（eGaN^® FET）及集成电路正在驱动最终用户应用的发展，包括LiDAR、无线充电、DC/DC电源转换、射频发射基站、卫星系统及音频放大器等应用。

从现场可靠性数据可以确证eGaN^® FET及集成电路于客户应用的品质。在本章节，我们分享eGaN FET的可靠性及现场数据的概述，包括在过去六年间我们对量产及已经付运的eGaN产品所收集的可靠性现场数据，以及分析超过170亿小时受测器件的现场数据。最后所得的FIT比率(109小时内发生失效的器件)大约是0.24，这是目前最好的现场可靠性测试结果。

Plant Analog
作者：Chris Jakubiec
2016年5月1 日
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