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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage
eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters. EDN Read article 阅读全文
分类: 技术文章

Best Practices for Integrating eGaN FETs

Best Practices for Integrating eGaN FETs
Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters. Power Electronics Read article 阅读全文
分类: 技术文章

采用芯片级封装的氮化镓(GaN)晶体管改善系统的热性能

采用芯片级封装的氮化镓(GaN)晶体管改善系统的热性能

随着功率转换器需要更高的功率密度,晶体管必须配合不断在缩减的电路板面积。氮 化镓(GaN)功率晶体管除了可以提高电源效率外,它们也必须具备更高的热效率。在 这篇文章中,我们探讨采用芯片级封装的增强型氮化镓场效应晶体管(eGaN ®FET) 的热性能,并与最先进的Si MOSFET比较两种器件的电气性能和热性能。

Bodo's China
2016年10月
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分类: 技术文章

Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors
With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. This article evaluates the thermal performance of chip-scale packaged eGaN® FETs and compares their in-circuit electrical and thermal performance with state-of-the-art silicon MOSFETs. Bodo’s Power Systems David Reusch, Ph.D. and Alex Lidow, Ph.D. June 1, 2016 Read article 阅读全文
分类: 技术文章
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