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Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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分类: 技术文章

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
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分类: 技术文章

宜普电源转换公司(EPC)发布第十一阶段可靠性测试报告 - 从失效性测试看到氮化镓器件的稳定性比硅功率MOSFET器件更具优势

宜普电源转换公司(EPC)发布第十一阶段可靠性测试报告 -  从失效性测试看到氮化镓器件的稳定性比硅功率MOSFET器件更具优势

第一至第十阶段可靠性测试报告后,EPC公司的第十一阶段可靠性测试报告进一步丰富知识库。此报告对受测器件进行超过1230亿元件-小时应力测试,并且展示氮化镓器件的稳定性是硅功率器件所不能实现的。

EPC公司发布第十一阶段可靠性测试报告,与工程师分享受测器件如何实现优越的现场可靠性的策略 - 在广阔测试条件下,采用失效性测试器件(test-to-fail)的反复测试方法,从而知道如何构建更稳固的产品以达到应用所需,例如面向全自动驾驶车辆的激光雷达LTE通信基站、汽车的车头灯及卫星等应用。

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分类: 新闻稿

测试氮化镓器件在何时开始失效

测试氮化镓器件在何时开始失效

从2010年3月起,氮化镓(GaN)功率器件已经实现高可靠性并进行量产。本章详细阐析如何测试出器件在何时开始失效,从而了解数据手册给出的器件工作条件,距离其工作极限值还有多少余量。而最重要的是,找出器件固有的失效机理,了解其失效的根本原因、恒常操作情况、温度、电气应力或机械应力等,从而找出产品在一般工作条件下,它的安全使用寿命。

Power Systems Design
2020年3月
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分类: 技术文章

Evaluation of measurement techniques for high speed GaN transistors

Evaluation of measurement techniques for high speed GaN transistors

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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分类: 技术文章