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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

本章讨论由于低压硅基氮化镓(GaN)器件具备超快速的开关速度,因此实现了很多全新应用的出现。这些应用推动了行业的改革,例如面向全自动驾驶汽车的激光雷达(lidar)、面向5G通信应用的包络跟踪,以及家用和用于办公室的大面积无线电源技术。此外,我们会探讨氮化镓功率器件如何为手术用的机械人带来精准的控制,从而推动了医疗行业的最新发展。

Power Systems Design
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分类: 技术文章