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宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

针对DC/DC、激光雷达(LiDAR)、无线电源及其它很多应用的客户群正在不断地扩大,宜普电源转换公司(EPC)继续其创新之路,在2019年3月及4月里,于全球著名展览会与设计工程师会面并答疑解难,旨在帮助工程师发挥氮化镓技术的优势,携手打造共创共赢的局面。

宜普电源转换公司(EPC)的专家于全球展览会与设计工程师会面,希望加深与氮化镓技术相关的知识交流,使得工程师可以利用基于氮化镓器件的解决方案,创新新一代的设计。

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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分类: 技术文章

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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分类: 技术文章

GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

氮化镓器件对提升主流应用的效率的贡献很大,例如在传统硅基12 V - 1 V负载点 DC/DC转换器。基于eGaN集成电路的12 V转到1 V、12 A负载转换器在5 MHz的频率下,可以实现78%峰值效率及1000 W/in3 功率密度,而成本则低于每瓦0.2美元。

Power Systems Design
2019年1月
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分类: 技术文章