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The Amazing New World of Gallium Nitride

The Amazing New World of Gallium Nitride
From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride. HACKADAY Read article 阅读全文
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PCIM Europe – where power is at the core of innovation

PCIM Europe – where power is at the core of innovation
This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009. Electronic Specifier Read article 阅读全文
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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap
In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN ... 阅读全文
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Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users
In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users. EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN ... 阅读全文
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GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

氮化镓器件对提升主流应用的效率的贡献很大,例如在传统硅基12 V - 1 V负载点 DC/DC转换器。基于eGaN集成电路的12 V转到1 V、12 A负载转换器在5 MHz的频率下,可以实现78%峰值效率及1000 W/in3 功率密度,而成本则低于每瓦0.2美元。

Power Systems Design
2019年1月
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氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

本章讨论由于低压硅基氮化镓(GaN)器件具备超快速的开关速度,因此实现了很多全新应用的出现。这些应用推动了行业的改革,例如面向全自动驾驶汽车的激光雷达(lidar)、面向5G通信应用的包络跟踪,以及家用和用于办公室的大面积无线电源技术。此外,我们会探讨氮化镓功率器件如何为手术用的机械人带来精准的控制,从而推动了医疗行业的最新发展。

Power Systems Design
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The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!
In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown. Power Systems Design Read article 阅读全文
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硅基氮化镓功率器件如何把硅基功率MOSFET逐出?

硅基氮化镓功率器件如何把硅基功率MOSFET逐出?

专为高效电源转换而设的氮化镓功率晶体管已经投产7年多了。全新的市场例如激光雷达、包络跟踪及无线电源,都成为氮化镓的新兴市场,因为氮化镓具备超高速的的开关速度。这些市场使得氮化镓产品得以量产、成本更低及具备优越的可靠性。这些优势为比较保守的设计工程师提供更大的利好条件,因此,DC/DC转换器工程师、AC/DC转换器及车载应用工程师都开始对氮化镓器件进行评估。要把120亿美元的硅基MOSFET市场转为氮化镓市场,还有什么壁垒呢?就是信心的问题。设计工程师、制造工程师、采购经理及管理层都必需对氮化镓技术的优势有足够的信心、相信氮化镓技术可以解决设计师对采用全新技术的风险的疑问。让我们看看3个主要构成风险的因素:供应链、成本及产品的可靠性。

IEEE Spectrum
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氮化镓的雷霆威力及演变

氮化镓的雷霆威力及演变

从2010年开始,自硅基氮化镓(GaN)晶体管商用化后,低压氮化镓晶体管推动了很多全新应用的发展。氮化镓器件具备超快速开关,推动全新市场诸如激光雷达、包络跟踪及无线电源市场的出现。这些全新应用进一步实现更强大的供应链、低制造成本及器件前所未有的高可靠性。这些优势使得比较保守的设计工程师在DC/DC转换器、AC/DC转换器及车载等各种应用开始对氮化镓器件进行评估。在本文章系列,我们将讨论多种发挥氮化镓器件优势的应用,实现最终产品差异化的竞争优势。首先,我们会探讨是什么因素加快了氮化镓器件的普及。

Power Systems Design
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The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion
In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs. Power Systems Designs By Edward A. Jones, Michael de Rooij, and David Reusch Read article 阅读全文
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功率芯片 – 但是,跟我们所认识的不一样了

功率芯片 – 但是,跟我们所认识的不一样了

Max Smolaks欢迎于电源链(power chain)即将替代硅材料的全新氮化镓材料。

在过去的35年里,电源供电一直采用功率金属氧化物半导体场效应晶体管(MOSFET) –利用电压受控的硅器件进行开关及利用电场允许或阻止电流的流通。

Data Center Dynamics
2017年4月19日
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硅器件的竞争对手悄悄走进面向Apple、Google及Tesla的半导体市场

硅器件的竞争对手悄悄走进面向Apple、Google及Tesla的半导体市场

人们用硅材料命名了“硅谷”,而硅材料现正面对全新并具有潜力的竞争对手 – 氮化镓(GaN)材料。有说氮化镓器件可以取得300亿美元的半导体电源供应产业的市场份额。这个市场涵盖了所有利用墙上的电源插座取得电源的产品—从Apple(AAPL)的iPhone充电器,以至Tesla(TSLA)的豪华电动汽车。

Investor's Business Daily
Allison Gatlin
2016年7月
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A Silicon Pioneer Plays Taps for Silicon and Power Cords

A Silicon Pioneer Plays Taps for Silicon and Power Cords
Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977. His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the ... 阅读全文
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eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers
There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge. Power Systems ... 阅读全文
分类: 技术文章
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