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Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

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硅、氮化镓与碳化硅器件的比拼:我的功率设计应该选用哪一个工艺及供应商?

杂志:EDN
作者:Steve Taranovich
日期:2013年3月15日

随着功率元件不断的演进,领先开发者之间的竞赛更趨白热化。业界专家认为在2013年中大约有一半的氮化镓、硅及碳化硅器件的供应商将在工艺方面取得进展、提供全新结构及性能,进而为业界提供全新选择及开发工具。详情请浏览http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

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