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氮化镓的雷霆威力及演变

氮化镓的雷霆威力及演变

从2010年开始,自硅基氮化镓(GaN)晶体管商用化后,低压氮化镓晶体管推动了很多全新应用的发展。氮化镓器件具备超快速开关,推动全新市场诸如激光雷达、包络跟踪及无线电源市场的出现。这些全新应用进一步实现更强大的供应链、低制造成本及器件前所未有的高可靠性。这些优势使得比较保守的设计工程师在DC/DC转换器、AC/DC转换器及车载等各种应用开始对氮化镓器件进行评估。在本文章系列,我们将讨论多种发挥氮化镓器件优势的应用,实现最终产品差异化的竞争优势。首先,我们会探讨是什么因素加快了氮化镓器件的普及。

Power Systems Design
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宜普电源转换公司(EPC)推出比等效MOSFET小型化8倍的 40 V氮化镓功率晶体管

宜普电源转换公司(EPC)推出比等效MOSFET小型化8倍的 40 V氮化镓功率晶体管

宜普公司为功率系统设计师提供比等效MOSFET小型化8倍的40 V、5 mΩ氮化镓功率晶体管(EPC2049),应用于负载点(POL)转换器、激光雷达(LiDAR)及具低电感的马达驱动器。

宜普电源转换公司(EPC)宣布推出EPC2049功率晶体管,应用于负载点(POL)转换器激光雷达(LiDAR)包络跟踪电源D类音频放大器及具低电感的马达驱动器。 EPC2049晶体管的额定电压为40 V、最大导通电阻为5 mΩ及脉冲输出电流为175 A。

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EPC推出视频系列《GaN如何改变我们的生活方式》

EPC推出视频系列《GaN如何改变我们的生活方式》

宜普电源转换公司(EPC)与工程师分享经过专业制作的6个视频,展示出在最终客户端的应用,例如无线充电桌面、高性能激光雷达、48 V–1.8 V DC/DC单级转换,以及利用氮化镓晶体管及集成电路实现准确控制的马达驱动器等应用。

宜普电源转换公司(www.epc-co.com.cn)制作了6个精简视频,展示出在最终客户端采用eGaN® FET及集成电路eGaN® FET及集成电路的应用。这些视频描述氮化镓技术正在改变我们的生活方式,并挑战功率系统设计工程师如何在他们新一代的功率系统设计中,发挥高效氮化镓场效应晶体管及集成电路的优势。

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宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州Blacksburg的eGaN FET及 IC应用中心落成启用并聘任Suvankar Biswas博士为高级应用工程师

宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州Blacksburg的eGaN FET及 IC应用中心落成启用并聘任Suvankar Biswas博士为高级应用工程师

宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州Blacksburg的eGaN® FET及 IC应用中心落成启用并聘任Suvankar Biswas博士为高级应用工程师

宜普电源转换公司(EPC)宣布位于美国弗吉尼亚州(Virginia)的Blacksburg应用中心落成。该中心进一步支持增强型氮化镓晶体管及集成电路的研发及应用,从而扩大潜在市场的覆盖率。除了基于传统的场效应晶体管及集成电路的功率转换应用外,氮化镓技术推动新兴应用的出现,包括无线电源传输、应用于全自动驾驶车辆的激光雷达技术及 支持4G和5G通信标准的包络跟踪应用。

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采用eGaN FET设计的包络跟踪电源支持20 MHz LTE带宽

采用eGaN FET设计的包络跟踪电源支持20 MHz LTE带宽

本篇文章阐述面向使用第四代移动通信技术(4G)LTE带宽的无线通信基站基础设施并采用EPC8004高频氮化镓场效应晶体管设计的包络跟踪电源。基于eGaN® FFET并采用四相位拓扑的软开关降压转换器可以准确地跟踪峰均比(PAPR)为7 dB的20 MHz LTE包络信号,提供60 W以上的平均负载功率,而总效率可高达92%。这种设计的可扩展性能可以支持不同的功率级别,工程师只需选择不同的EPC场效应晶体管设计不同的系统,从而可以满足不同功率级别的要求。

Bodo’s Power Systems
张远哲博士及Michael de Rooij博士
2016年3月
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标签: 包络跟踪

IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications.

EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT).

Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for envelope tracking. In this seminar, the latest family of high frequency enhancement-mode gallium nitride power transistors on silicon (eGaN® FETs) will be presented in a few multi-megahertz buck converters. The different system-level parasitics will be discussed and their impact evaluated based upon the experimental results.

The presenter will be Johan Strydom, EPC Vice President of Applications Engineering. Dr. Strydom is widely published in the industry, including being co-author of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.

Webinar Registration Information:

Title: Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters
Date: Wednesday, September 3, 2014
Time: 11:00 AM – 12:00 AM (EDT)
Registration:http://www.ieee-pels.org/products/pels-upcoming-webinars/2483-ieee-pels-webinar-series-using-egan-fets-for-envelope-tracking-buck-converters-by-johan-strydom
Fee: Free of Charge

About IEEE Power Electronics Society (PELS)

The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control and condition of electric power.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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宜普电源转换公司将在2014年APEC®研讨会分享支持高频谐振转换器及包络跟踪供电的氮化镓(GaN)技术

于2014年IEEE的 APEC功率电力电子业界研讨会中,宜普电源转换公司的应用技术专家将分享氮化镓场效应晶体管技术如何于应用中比硅功率MOSFET器件优胜。

硅基增强型功率氮化镓场效应晶体管之全球领导厂商宜普电源转换公司将于2014年APEC技术研讨会以应用为主题进行三场技术演讲,与参与者分享高频谐振转换器及高频、硬开关功率转换器设计。研讨会将于3月16日至20日在德克萨斯州的Fort Worth举行。

首屈一指的APEC研讨会以功率电子业务的实用及应用方面为主题,深受功率电子业界专业人员爱戴,讨论的范围涵盖使用、设计、制造及推广所有种类的功率电子元件及设备,详情请访问 http://www.apec-conf.org/

宜普电源转换公司共同创办人及首席执行官Alex Lidow博士称「我们非常荣幸得到APEC2014年技术复核委员会选出EPC专家的技术文章,于APEC的年度研讨会发表,这是支持我们相信功率系统工程师对高性能氮化镓技术感到兴趣并获得他们的赞同。」

EPC专家以GaN FET技术为题的演讲:

与会的工程师如果想与我们的应用专家会面,请发要求会面的邮件至 [email protected]与我们联系。

宜普电源转换公司简介

宜普公司是基于增强型氮化镓的功率管理器件的领先供应商,为首家公司推出替代功率MOSFET器件的硅基增强型氮化镓(eGaN)场效应晶体管,其目标应用包括 直流- 直流转换器无线电源传送包络跟踪、射频传送、太阳能微型逆变器、 光学遥感技术(LiDAR)D类音频放大器 等应用,器件性能比最好的硅功率MOSFET高出很多倍。详情请浏览 我们的网站www.epc-co.com.cn 。

客户可以在我们的网页注册( http://bit.ly/EPCupdates ),定期收取EPC公司的最新产品资讯。

商标

eGaN® 是Efficient Power Conversion Corporation宜普电源转换公司的注册商标。

媒体联络人

Winnie Wong ( [email protected])

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Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN® Power Transistor Family Capable of Amplification into the Multiple GHz Range

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.

EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.

This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

Applications benefiting from the low power, compact, high frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly resonant wireless power transfer systems for wireless charging of mobile devices.

“The EPC8010 is an excellent addition to our family of ultra high-speed eGaN FETs. It takes EPC and gallium nitride transistor technology to a level of performance that enables applications beyond the capability of the aging MOSFET. These eGaN FETs can be used in both power switching and RF applications,” noted Alex Lidow, co-founder and CEO.

Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.

Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation at http://bit.ly/EPC8010DK

The EPC9030 development board is available now for $150 through Digi-Key Corporation at http://bit.ly/EPC9030DK

Design Information and Support for eGaN FETs:

 

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as

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GaN — Still Crushing Silicon One Application at a Time

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.

Power Pulse
By: Alex Lidow
February, 2014

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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications.

EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

“It is noteworthy that the Darnell Energy Summit has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their conference. This selection continues to demonstrate the superior performance of GaN technology has gained the interest and acceptance of those interested in improving energy efficiency,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Presenter: Alex Lidow and David Reusch
Monday, September 9th (9:00 a.m. – 12:30 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will also discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical Presentations by EPC Experts Featuring GaN FETs:

• Plenary Session 
“GaN: Crushing Silicon One Application at a Time”
Presenter: Alex Lidow
​Tuesday, September 10th (Session 2.1, 1:45 p.m.)

• Technical Sessions 
“eGaN®FETs for High Frequency Hard-Switching Converters”
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分类: 新闻稿

eGaN®FET与硅功率器件比拼第八章:包络跟踪的应用

作者:宜普公司产品应用副总裁Johan Strydom博士
日期:2012年4月30日刊载于Power Electronics Technology 杂志

在射频功率放大器的包络跟踪不是新技术。但随着社会对电源产业日益增长的需求如增长手机的电池寿命、提高基站的能效及增加高成本的射频传输器的输出功率,通过包络跟踪来提高射频功率放大器系统的效率已经成为科研的一个重要议题。

我们在这篇文章展示了在大功率输出的包络跟踪应用中的降压转换器,如何使用eGaN FET实现功率及效率方面可达到的成效。

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