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Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

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Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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硅片已死……分立功率器件快将消失

硅片已死……分立功率器件快将消失

在超过四十年中,随着功率MOSFET器件的结构、技术和电路拓扑的创新,可满足不断增长的电力需求,因此改善了电源管理的效率和成本。 然而,在这新世纪的发展,随着硅功率MOSFET器件已经接近其理论极限,其改进速度已大为减慢。 与此同时,一种全新材料 - 氮化镓(GaN)- 正朝着新的理论性能领域的方向,稳步发展,其性能是老化的MOSFET器件的6,000倍,以及是目前市场的最优越GaN器件的300倍。

EETimes
2020年6月
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Integrated GaN Power Stage for eMobility

Integrated GaN Power Stage for eMobility

Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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GaN Integrated Power Stage – Redefining Power Conversion

GaN Integrated Power Stage –  Redefining Power Conversion

Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Power Product News from ‘Virtual APEC’

Power Product News from ‘Virtual APEC’

Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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学习利用氮化镓(GaN)技术设计最先进的人工智能、机械人、无人机、 全自动驾驶汽车及高音质音频系统

学习利用氮化镓(GaN)技术设计最先进的人工智能、机械人、无人机、 全自动驾驶汽车及高音质音频系统

EPC公司进一步更新了其广受欢迎的教育视频播客系列,上载了6个视频,针对器件可靠性及基于氮化镓场效应晶体管及集成电路的各种先进应用,包括面向人工智能的高功率密度运算应用,面向机械人、无人机及车载应用的激光雷达系统,以及D类放音频放大器。

宜普电源转换公司(EPC)更新了其广受欢迎的“如何使用氮化镓器件”的视频播客系列。刚刚上载的六个视频主要分享实用范例,目的是帮助设计师利用氮化镓技术设计面向人工智能服务器及超薄笔记本电脑的先进DC/DC转换器、面向机械人、无人机及全自动驾驶汽车的激光雷达系统,以及实现有可能是具有最高音质的音频系统

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氮化镓与48 V应用 – 目前的发展及何去何从?

氮化镓与48 V应用 – 目前的发展及何去何从?

中压氮化镓场效应晶体管(eGaN FET)的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时,EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势,积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构,也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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宜普电源转换公司(EPC)发布第十一阶段可靠性测试报告 - 从失效性测试看到氮化镓器件的稳定性比硅功率MOSFET器件更具优势

宜普电源转换公司(EPC)发布第十一阶段可靠性测试报告 -  从失效性测试看到氮化镓器件的稳定性比硅功率MOSFET器件更具优势

第一至第十阶段可靠性测试报告后,EPC公司的第十一阶段可靠性测试报告进一步丰富知识库。此报告对受测器件进行超过1230亿元件-小时应力测试,并且展示氮化镓器件的稳定性是硅功率器件所不能实现的。

EPC公司发布第十一阶段可靠性测试报告,与工程师分享受测器件如何实现优越的现场可靠性的策略 - 在广阔测试条件下,采用失效性测试器件(test-to-fail)的反复测试方法,从而知道如何构建更稳固的产品以达到应用所需,例如面向全自动驾驶车辆的激光雷达LTE通信基站、汽车的车头灯及卫星等应用。

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采用GaN技术的电源转换

采用GaN技术的电源转换

当硅技术已经到了性能极限,采用氮化镓器件的全新设计使得氮化镓技术得以继续普及。氮化镓器件的发展还是刚刚起步,它的性能将得以继续提升、集成电路也将会更具优势,以及将有更多全新的氮化镓产品推出市场。

Electronics Weekly
2019年12月
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GaN in Space

GaN in Space

This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Executive Interview with Alex Lidow on Winning GaN Applications

Executive Interview with Alex Lidow on Winning GaN Applications

Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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功率半导体战争开始了

功率半导体战争开始了

氮化镓(GaN)及碳化硅(SiC)器件的价格下调,对客户而言,更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体,摩拳擦掌,正在爆发新一轮的半导体大战,全速进攻传统硅基器件的市场份额。

Semiconductor Engineering
2019年10月
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EPC Launches 3rd Edition of Gallium Nitride (GaN) Textbook with Power Conversion Applications Focus

EPC Launches 3rd Edition of Gallium Nitride (GaN) Textbook with Power Conversion Applications Focus

GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”

EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. 

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EPC Partners with Solace Power to Incorporate Highly Efficient, Low Cost eGaN FETs for Its Upcoming 250-Watt Wireless Power Platforms

EPC Partners with Solace Power to Incorporate Highly Efficient, Low Cost eGaN FETs for Its Upcoming 250-Watt Wireless Power Platforms

Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

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Podcast: Moore's Law and GaN

Podcast: Moore's Law and GaN

Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

EE Times on Air
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DC-DC Conversion for 48 V – 12 V Automotive Applications

DC-DC Conversion for 48 V – 12 V Automotive Applications

GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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GaN Powers Small Satellites

GaN Powers Small Satellites

Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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