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High Step-Down Ratio Buck Converters With eGaN Devices

The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs). By Johan Strydom, EPC, El Segundo, Calif. and Bob ... 阅读全文

宜普eGaN荣获中国电子设计技术杂志颁发2010年中国创新大奖

新闻稿 宜普公司领导市场的增强型硅基氮化镓(eGAN™)功率晶体管产品系列获得电子设计技术杂志颁发的2010年度中国创新大奖 宜普电源转换公司的增强型硅基氮化镓(eGAN™)功率晶体管产品系列获得中国电子设计技术杂志针对功率器件和模块设计领域颁发的2010年度中国创新大奖 - 编辑推荐奖项。 “宜普公司的增强型硅基氮化镓(eGAN™)功率晶体管产品系列经过中国设计工程师的网上投票荣获我们颁发的2010年度中国创新大奖 - 编辑推荐奖。这是对还没有于目标市场完全被采用的宜普产品性能表现给予最大肯定,也是对宜普公司在中国工程设计领域可作巨大潜在贡献的肯定,宜普公司的创新在电源技术路线图中具有重要的里程碑意义。”中国电子设计技术杂志发行人张未名表示。 宜普公司合伙创始人兼首席执行官Alex Lidow指出 〝我们非常荣幸eGaN™ FET得到中国电子设计技术杂志各位编缉及广大读者的大力支持,从超过150提名产品中获奖,证明宜普增强型硅基氮化镓晶体管乃电源转换的突破性技术,并支持我们有理由相信硅基MOSFET的性能已经到了极限,而eGaN™技术将引领功率晶体管继续攀登性能高峰〞。 eGaN™ 功率晶体管的优点能使诸多应用受益,涵盖范围甚广, ... 阅读全文
分类: 新闻稿
标签: 奖项

Driving eGaN™ FETs Both gate and Miller capacitances are significantly lower

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products. By Johan Strydom PhD, Director of Application Engineering EPC Bodo’s Power Systems November, 2010 Read the article 阅读全文
分类: 技术文章

Device Models for Enhancement Mode GaN Transistors from Efficient Power Conversion Corporation

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaN™) transistors on its web site. These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models. TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems ... 阅读全文
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