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eGaN FET-Silicon Power Shoot-Out Part 3: Power over Ethernet

eGaN FET是以太网供电(PoE)应用中可行且高效方案,用以替代标准MOSFET解决方案。这些FET支持更高的工作频率,因而可以减小转换器体积和成本。我们搭建了13W和26W内含eGaN FET以太网供电转换器,并与标准MOSFET设计进行了逐项评估。不管在那种情况下,eGaN FET转换器都具有比MOSFET转换器更高的效率,因而具有降低系统成本的巨大潜力。

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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分类: 技术文章

Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

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标签: 奖项
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