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eGaN®FET与硅功率器件比拼第八章:包络跟踪的应用

作者:宜普公司产品应用副总裁Johan Strydom博士
日期:2012年4月30日刊载于Power Electronics Technology 杂志

在射频功率放大器的包络跟踪不是新技术。但随着社会对电源产业日益增长的需求如增长手机的电池寿命、提高基站的能效及增加高成本的射频传输器的输出功率,通过包络跟踪来提高射频功率放大器系统的效率已经成为科研的一个重要议题。

我们在这篇文章展示了在大功率输出的包络跟踪应用中的降压转换器,如何使用eGaN FET实现功率及效率方面可达到的成效。

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分类: 技术文章

Huge Expectations for GaN Market Growth

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

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Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – April, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership. "It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies ... 阅读全文
分类: 新闻稿

加快eGaN 发展,EPC称硅FET已走到尽头

eGaN® FET 的高性能正在更快地被DC/DC 电源转换、负载点转换器、D类音频放大器及高频电路等应用采用,而TI推出业界首款100V半桥GaN FET驱动器(LM5113),经过优化,配合氮化镓场效应晶体管使用,则更进一步推动eGaN FET在高性能电信、网络以及数据通信中心的应用。

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电子设计技术(2012年4月书刊

EDN 电子杂志2012年第04期

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