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eGaN FET-Silicon Power Shoot-Out: A Retrospective of Sixteen Articles

When a new technology is introduced, it is not reasonable to think that engineers will intuitively know how to effectively and efficiently take advantage of the performance enhancements that the new technology offers – there is always a learning curve. This is being borne out in the case of the rapidly emerging technology of high performance gallium nitride transistors. GaN FET technology was made available to the general power conversion engineering community in mid-2010 when Efficient Power Conversion (EPC) introduced the industry’s first commercially available GaN ... 阅读全文
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