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GaN 晶体管启程商用之路

自2004年GaN HEMT(高电迁移 率晶体管)问世以来,基于GaN材料 的新技术不断涌现,但由于成本偏 高和耗尽型 作的不方便,GaN晶体 管市场接受度一直受限,不过这一 局面有望得到改观。美国宜普公司 最近推出首款增强型硅基GaN功率晶 体管(简称eGaN FET),可专门用于 替代MOSFET,而且使用标准硅制 造技术和设备,可以低成本大批量 生产。

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宜普电源转换公司首席执行官Alex Lidow于中国创新科技会议演讲

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分类: 访问文稿

High Step-Down Ratio Buck Converters With eGaN Devices

The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs). By Johan Strydom, EPC, El Segundo, Calif. and Bob ... 阅读全文

宜普eGaN荣获中国电子设计技术杂志颁发2010年中国创新大奖

新闻稿 宜普公司领导市场的增强型硅基氮化镓(eGAN™)功率晶体管产品系列获得电子设计技术杂志颁发的2010年度中国创新大奖 宜普电源转换公司的增强型硅基氮化镓(eGAN™)功率晶体管产品系列获得中国电子设计技术杂志针对功率器件和模块设计领域颁发的2010年度中国创新大奖 - 编辑推荐奖项。 “宜普公司的增强型硅基氮化镓(eGAN™)功率晶体管产品系列经过中国设计工程师的网上投票荣获我们颁发的2010年度中国创新大奖 - 编辑推荐奖。这是对还没有于目标市场完全被采用的宜普产品性能表现给予最大肯定,也是对宜普公司在中国工程设计领域可作巨大潜在贡献的肯定,宜普公司的创新在电源技术路线图中具有重要的里程碑意义。”中国电子设计技术杂志发行人张未名表示。 宜普公司合伙创始人兼首席执行官Alex Lidow指出 〝我们非常荣幸eGaN™ FET得到中国电子设计技术杂志各位编缉及广大读者的大力支持,从超过150提名产品中获奖,证明宜普增强型硅基氮化镓晶体管乃电源转换的突破性技术,并支持我们有理由相信硅基MOSFET的性能已经到了极限,而eGaN™技术将引领功率晶体管继续攀登性能高峰〞。 eGaN™ 功率晶体管的优点能使诸多应用受益,涵盖范围甚广, ... 阅读全文
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标签: 奖项

Driving eGaN™ FETs Both gate and Miller capacitances are significantly lower

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products. By Johan Strydom PhD, Director of Application Engineering EPC Bodo’s Power Systems November, 2010 Read the article 阅读全文
分类: 技术文章

Device Models for Enhancement Mode GaN Transistors from Efficient Power Conversion Corporation

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaN™) transistors on its web site. These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models. TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems ... 阅读全文
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GaN正式登场,传统功率器件将被替代

MOSFET、IGBT可以休矣,即将成为过去,在这个250亿美元的市场取而代之的将是GaN功率器件——这是EPC首席执行官Alex Lidow日前在接受EDN China专访时的说法。Lidow博士之前在IR担任了12年CEO,在2007年他创立了宜普电源转换公司(Efficient Power Conversion Corporation,EPC),他在斯坦福大学的博士论文就是关于HEXFET功率MOSFET的,是相关专利的发明者之一。在HEXFET专利过期之前,相关版税已超过9亿美元。

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Darnell Power forum looks at GaN transistor technology

The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements. By Johan Strydom and Alex Lidow September, 2010 Read the article 阅读全文
分类: 技术文章

硅功率MOSFET 是否行将就木?

人们对于电能的需求永无止境,功率MOSFET在结构、技术和电路拓扑上的创新也一刻未停,但电源管理效率和成本的挑战也一直加码。硅功率MOSFET的物理极限似乎限制了其继续满足挑战的能力,以GaN为主的新材料工艺技术的发展似乎大有取而代之的势头。

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eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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分类: 技术文章

How2 Get the Most Out of GaN Power Transistors

Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs. By Johan Strydom How2Power June, 2010 Read the article 阅读全文
分类: 技术文章

GaN – the New Frontier for Power Conversion

Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Can Gallium Nitride Replace Silicon?

For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market. By Alex Lidow, PhD Power Electronics Europe Issue 2, 2010 Read the article 阅读全文
分类: 技术文章
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