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GaN Powers Small Satellites

GaN Powers Small Satellites
Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drvie voltage and smaller solution sizes compared to the traditional silicon counterparts. Electronics Weekly July, 2019 Read article 阅读全文
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EPC及Spirit Electronics提供eGaN功率器件的数据包

EPC及Spirit Electronics提供eGaN功率器件的数据包

EPC及Spirit Electronics公司携手为客户提供领导业界的氮化镓功率器件的特定制造批次的数据服务。

宜普电源转换公司(EPC)宣布与Spirit Electronics公司携手为客户提供一系列氮化镓功率器件的特定批次的数据。

宜普公司首席执行官及共同创办人Alex Lidow说,”Spirit Electronics具备与国防及宇航客户的丰富合作经验,我们携手为严峻应用环境所需,为客户增值而提供氮化镓(eGaN)功率半导体的特定批次的数据包。”

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氮化镓正面攻击硅功率MOSFET器件

氮化镓正面攻击硅功率MOSFET器件

目前的氮化镓场效应晶体管在尺寸及性能方面以飞快的速度发展,而目前为业界树立基准的氮化镓器件的性能还可以提升多300倍。

最早采用氮化镓器件的应用是利用氮化镓的超快速开关速度,例如面向全自动驾驶汽车和无人机的激光雷达系统、机械人,以及4G/LTE基站。氮化镓器件的产量一直在增加,而其价格跟开关速度更慢、尺寸更大型和日益陈旧的MOSFET器件相约。因此,目前正是氮化镓器件正面攻击MOSET的时候!。

Bodo’s Power System
2019年6月
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宜普电源转换公司提供氮化镓(eGaN)功率器件的晶圆

宜普电源转换公司提供氮化镓(eGaN)功率器件的晶圆

为了使得客户易于集成功率系统,宜普电源转换公司(EPC)为客户提供领导业界的氮化镓功率器件的晶圆。

EPC公司宣布推出领导业界的增强型氮化镓器件的晶圆,使得客户易于集成功率系统。EPC公司的氮化镓场效应晶体管(eGaN® FET)及集成电路一直以来都是以单个并包含锡条或锡球的芯片级器件出售。

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Efficient Power Conversion (EPC) CEO and Co-Founder Inducted into the ISPSD Hall of Fame 2019

Efficient Power Conversion (EPC) CEO and Co-Founder Inducted into the ISPSD Hall of Fame 2019
EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019 El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20th, 2019 at 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at ... 阅读全文
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jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage
eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters. EDN Read article 阅读全文
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The Amazing New World of Gallium Nitride

The Amazing New World of Gallium Nitride
From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride. HACKADAY Read article 阅读全文
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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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EPC于欧洲PCIM展会展示基于eGaN 技术、面向汽车、计算机及其他多种应用、具高功率密度的高效DC/DC功率转换

EPC于欧洲PCIM展会展示基于eGaN 技术、面向汽车、计算机及其他多种应用、具高功率密度的高效DC/DC功率转换

宜普电源转换公司(EPC)将于欧洲PCIM展会现场演示优越的氮化镓技术如何提升多种应用所需的电源供电效率,包括运算、通信及运输行业。

EPC团队将于5月7日至9日在德国的Nuremberg、欧洲PCIM展览及研讨会的会场,进行7场关于氮化镓(GaN® )技术及应用的演讲,并于7号馆、335展览摊位与工程师会面并分享最新的、基于eGaN FET及集成电路的终端客户产品。

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车规级80 V EPC2214 eGaN FET 使得激光雷达系统看得更清晰

车规级80 V EPC2214 eGaN FET 使得激光雷达系统看得更清晰

宜普电源转换公司(EPC)进一步扩大车规级氮化镓产品系列 – 全新成员是面向具有高分辨率的激光雷达系统、80 V的EPC2214氮化镓场效应晶体管,该元件成功通过国际汽车电子协会所制定的AEC Q101应力测试认证。

宜普电源转换公司(EPC)宣布再多一个车用氮化镓(eGaN)器件(80 V的EPC2214)成功通过AEC Q101测试认证,可在车用及其它严峻环境支持多种全新应用。

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氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

宜普电源转换公司(EPC)推出两个全新100 V氮化镓器件,可以支持服务器及汽车应用的48 V转换的要求。 我将在处理器、车用及能量存储系统等方面探讨48 V服务器的功率转换解决方案(可参考我的文章 “双向DC/DC电源供电: 我们应该如何取向?”),未来将在EDN文章中看到。氮化镓功率晶体管必需是这些不同架构的一部分 -- 我相信没有其它更优越的元件可以替代氮化镓器件了 。

Planet Analog
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Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion
EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion. EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) ... 阅读全文
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宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

专为功率系统设计师而设的EPC2052功率晶体管是一种100 V、13.5 mΩ并采用超小型芯片级封装的晶体管,可实现74 A脉冲输出电流。面向48 V-12 V DC/DC功率转换器,这些新一代氮化镓场效应晶体管工作在500 kHz频率下,可实现超过97%的效率。如果工作在1 MHz时,则实现超过96%的效率。

宜普电源转换公司(EPC)宣布推出100 V的EPC2052氮化镓场效应晶体管,其占板面积只是2.25平方毫米、最大导通阻抗(RDS(on))为13.5 mΩ及脉冲输出电流高达74 A 以支持高效功率转换。

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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

针对DC/DC、激光雷达(LiDAR)、无线电源及其它很多应用的客户群正在不断地扩大,宜普电源转换公司(EPC)继续其创新之路,在2019年3月及4月里,于全球著名展览会与设计工程师会面并答疑解难,旨在帮助工程师发挥氮化镓技术的优势,携手打造共创共赢的局面。

宜普电源转换公司(EPC)的专家于全球展览会与设计工程师会面,希望加深与氮化镓技术相关的知识交流,使得工程师可以利用基于氮化镓器件的解决方案,创新新一代的设计。

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus
New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions. Power Electronic Tips March, 2019 Read article 阅读全文
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