Award Recognizes Innovation in Power Device Technology for Enabling the Commercialization of GaN
EL SEGUNDO, Calif, — January 2016 — Today, Efficient Power Conversion (EPC) announced that its CEO Alex Lidow was selected as the recipient of the 2015 SEMI Award for North America for the innovation of power device technology, enabling the commercialization of GaN. Dr. Lidow is being honored for his work in the area of Process and Technology Integration.
Established in 1979, the SEMI Award was designed to recognize significant technological contributions to the semiconductor industry and to demonstrate the industry's high esteem for the individuals or teams responsible for those contributions.
Gallium Nitride (GaN) transistors and integrated circuits, which EPC sells to almost every major electronics company in the world, allow companies to make smaller, faster and more power-efficient products compared with those made from silicon. The use of GaN enables entirely new technologies and the advancement of existing technologies in a variety of areas, including 4G and 5G wireless communications, wireless charging, augmented reality glasses, autonomous vehicles and wireless medical technology, to name a few.
“Semiconductors fuel innovation, creating the backbone of technology advancement and subsequently, the economy at large,” said CEO and founder Alex Lidow. “It has been my driving passion to save energy by developing more efficient semiconductors and am honored to be recognized with this esteemed award. The innovative team at EPC has delivered the industry’s first off-the-shelf enhancement-mode gallium nitride transistors and ICs and will continue to partner with our customers to use GaN to change the way we live.”
Dr. Lidow will be formally presented the SEMI Award at the Industry Strategy Symposium (ISS) banquet on Tuesday, January 12, 2016 at the Ritz Carlton in Half Moon Bay, California.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]