新闻

客户可以在我们的网页 注册 ,定期收取最新消息包括全新产品发布、应用文章及更多其它资讯。如果你错过了已发布的资料,你可浏览以下的文档。

Device Models for Enhancement Mode GaN Transistors from Efficient Power Conversion Corporation

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaN™) transistors on its web site.

These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models.

TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems understand the value of the EPC eGaN power transistor family and reduce their time-to-market with benchmark products.

These free downloads are available at:

https://epc-co.com/epc/design-support/device-models

EPC has also written an application note to help users understand eGaN™ transistor capabilities and the applicability of the SPICE models. This application note is available at:

https://epc-co.com/epc/documents/product-training/Circuit_Simulations_Using_SPICE.pdf

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, Microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site:

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]