项目及活动

Motor & Drive Systems Conference

2023年2月1日星期三 - 2023年2月2日星期四
Motor & Drive Systems Conference
地点: Orlando, FL

Experimental Evaluation and Optimization of GaN Inverter for Motor Drive Applications Presenter: Federico Unnia, Application Engineer, Motor Drives and Systems

This paper deals with the usage of Gallium Nitride transistors in an inverter for motor drive applications. The aim of the paper is to give guidelines to motor drive hardware designers on how to minimize the components and optimize the layout in a GaN inverter, while keeping good switching waveforms and minimizing the ringing as a possible source of electro-magnetic interference.

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ISSCC 2023

2023年2月19日星期日 - 2023年2月23日星期四
ISSCC 2023
地点: 美国加州三藩市

来自 GaN 和车用GaN的机遇讲者:EPC公司首席执行官兼联合创始人Alex Lidow博士

电动汽车和氮化镓功率半导体是业界最近跨过临界点、实现大规模普及化的两项技术。这两种技术也深深相互影响彼此未来发展之路。氮化镓器件已经被证明为卓越的功率半导体,其性能优于硅器件且成本更低。汽车电气化为提高能源效率缔造了全新的机会,而氮化镓器件在前照灯、激光雷达传感器和 48 V 配电系统等车辆应用中,有助于提高由传统内燃机 (ICE) 驱动的汽车的安全性和效率,以及对轻度混合动力系统 (HEV) 和电池电动汽车 (BEV)的发展做出贡献。本演讲将讨论在汽车中采用氮化镓器件所带来的好处、未来应用的轨迹,包括 GaN 晶体管、GaN 集成电路的技术演进,以及基于低压 GaN 技术的电动汽车牵引驱动器的新电路拓扑。

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Power Electronics International Conference

2023年4月18日星期二 - 2023年4月19日星期三
Power Electronics International Conference
地点: Brussels, Belgium

GaN Integrated Circuits are Revolutionizing Power Electronics Speaker: Marco Palma, Director of Motor Drive Systems and Applications

The latest ePower™ integrated circuits based on gallium nitride technology are revolutionizing Power Electronics applications such as dc-dc converters and motor drives as industrial drones, e-bikes, scooters, power tools. Gallium nitride technology has opened a new era in the world of power electronics because of a clear differentiation factor between GaN and silicon: medium voltage gallium nitride devices can be built on a planar technology while this is cost-prohibitive for silicon devices. Silicon devices are made on a vertical technology, making it physically impossible to have two power devices in the same chip. EPC’s GaN-on-Si planar technology allows the integration of the power section with the control in the same die. In 2014, EPC started the journey toward a power system-on-a-chip introducing a family of integrated devices comprised of multiple FETs on one chip. Practical examples of real applications with these integrated circuits will be shown at the PE International Conference.

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EEHE 2023

2023年6月13日星期二 - 2023年6月15日星期四
EEHE 2023
地点: Essen, Germany

High Power-Density, Bi-Directional, 48 V to 12 V Converter using eGaN® FETs for next generation BEV’s Speaker: : Michael de Rooij, Ph.D., Vice President of Applications Engineering

This work presents a high power-density LLC based system that addresses size, with a 23 mm x 18 mm x 10 mm volume, weighs just 15 grams and can deliver up to 750 W power for 12 V systems, with unrestricted voltage range from 11.0 V through 14.3 V, operating from a 48 V bus, with range of 36 V through 52 V.

Power Steering Application using eGaN Integrated Circuit Speaker: Marco Palma, Director of Motor Drive Systems and Applications

In motor drive applications, GaN inverters allow the increase of the PWM frequency and the drastic reduction of dead times, allowing the removal of bulky electrolytic capacitors and the reduction of overall solution dimensions. These benefits result in a reduction in size, weight, and material cost, over equivalent MOSFET-based designs. This work presents recent developments in employing GaN integrated circuit devices in a multiple-three-phase motor power steering application that requires 48V or 24V nominal voltage and up to 10 ARMS in each stator phase winding.

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