项目及活动

SEMICON China 2020 功率及化合物半导体国际论坛2020

2020年6月28日星期日
SEMICON China 2020 功率及化合物半导体国际论坛2020
地点: 中国上海

开幕主题演讲:氮化镓技术如何推动车载系统的发展进程

讲者:宜普电源转换公司首席执行官兼共同创办人Alex Lidow博士

地点:上海市浦东新区花木路1388号上海浦东嘉里大酒店,浦东大宴会厅4

由于基于氮化镓器件的解决方案具备更高的效率、可靠性和功率密度,因此能够改善汽车系统的性能,其功率密度是当今汽车中使用的硅MOSFET所不可能实现的。是次开幕主题演讲将讨论以下的主题:

  • 面向轻度混合动力汽车的48 V功率转换,基于氮化镓器件的48 V/12 V、3 kW DC/DC转换器如何缩小尺寸、提升效率及降低成本?
  • 面向车载信息娱乐系统,基于氮化镓器件的2 MHz转换器如何降低损耗达40%至50%?
  • 具备更高的分辨率、更长距离侦测性能及成本更低的eGaN® 器件如何推动激光雷达及其它汽车ToF系统的发展进程?

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PCIM EU

2020年7月7日星期二 - 2020年7月8日星期三
PCIM EU
地点: Online

A Low Voltage BLDC Motor Drive Inverter Using a Monolithic eGaN® IC Power Stage

BLDC motors are popular choices and are finding increasing application in robotics and drones. Such applications have special requirements such as lightweight, small size, low torque ripple, and precision control. To address these needs, inverters powering the motors need to operate at higher frequency but require additional filtering to prevent excessive losses, EMI generation, and excess mechanical wear related to high frequency common mode and induced current flow. GaN FETs and IC’s offer the ability to operate at much higher frequencies in hard-switching topologies without incurring significant losses.

GaN FET-Based Ultra-Thin DC-DC Step-Down Converter

As computers, displays, smart phones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of this limited space. This paper will look into the feasibility of adopting various non-isolated DC-DC step-down topologies for an ultra-thin 48 V-to-20 V power solution. Two topologies, namely the three-level and the two-phase buck converters, are selected to design an ultra-thin 48 V-to-20 V, 250 W converter. GaN FETs are used to reduce the converter size and improve efficiency.

300 W 48V-12V 1/16th Brick DC-DC Converter Using GaN FETs

Brick DC-DC converters are standardized by the Distributed-power Open Standards Alliance (DOSA). They have promoted better compatibility and flexibility in power distribution systems for data center, telecommunication and automotive industries. These brick converters are commonly used to convert a nominal 48 V to a nominal 12 V distribution bus among other output voltages. The main trend has been towards higher power density given the form factor is fixed. This paper will introduce the design of a non-isolated 1/16th brick DC-DC converter using GaN FETs for 48 V-to-12 V application, with a maximum output power of 300 W and power density of 730 W/in3.

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How to GaN Webinar Series

2020年7月14日星期二 - 2020年7月15日星期三
How to GaN Webinar Series
地点: Online

GaN in Space Time: Tuesday, July 14, 2020 at 7:00 PM Pacific Daylight Time, or
Time: Wednesday, July 15, 2020 at 10:00 AM Pacific Daylight Time

Join the webinar to discover why GaN power transistors and ICs are the best choice for power conversion applications in space-based systems.

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