项目及活动

EPC- Empa Electronic GaN Webinar Series

2021年10月5日星期二 - 2021年10月27日星期三
EPC- Empa Electronic GaN Webinar Series
地点: Online

Get Ready for Technology Change with GAN Experts Speaker: Marco Palma, Director of Motor Drives Systems and Applications, EPC

Don't miss the 4 part "Online Webinar" series, which will be held this fall in partnership with Empa Elektronik & EPC, where you can reach GaN experts.

Register now for this webinar series which will be held on Microsoft Teams

2021功率半导体材料(氮化镓&碳化硅)应用器件国际论坛

2021年10月26日星期二 22:30 - 23:30 (UTC-05:00) Eastern Time (US & Canada)
2021功率半导体材料(氮化镓&碳化硅)应用器件国际论坛
地点: 線上研討會

氮化镓技术为无刷直流电机驱动器带来意想不到的优势 讲者:应用工程副总裁Michael de Rooij博士

目前应用于机器人和无人机中的无刷直流(BLDC)电机越来越普及。此类应用特别要求重量轻、体积小、转矩脉动低和高控制精度。为了满足这些要求,为电机供电的逆变器需要在更高的频率工作,而且需要额外的滤波来防止过高的损耗、EMI生成以及与高频共模和感应电流相关的过度机械磨损。GaNFET和IC能够在硬开关拓扑中在更高的频率下工作,而不会产生显着的损耗。我们在这个研讨会介绍了一种新型单片氮化镓半桥功率级集成电路,它可以在高频率下开关,每相可提供高达15ARMS的负载电流。高频不需滤波,从而尺寸可以更小和重量更轻,并且确保机器人技术所需的高精度控制而同时降低了可闻噪声。

WiPDA 2021

2021年11月7日星期日 - 2021年11月12日星期五
WiPDA 2021
地点: Virtual Event

Keynote Presentation
Gallium Nitride Integration and the End of Discretes Speaker: Alex Lidow, Ph.D., CEO and Co-Founder of Efficient Power Conversion

Integrated circuits made using GaN-on-Si substrates have been in production for over seven years. During that time, GaN-based ICs have evolved from pure discrete devices to monolithic half-bridge devices and then onto power FETs that included their own monolithically integrated driver, and more recently, to fully monolithic power stages including power FETs, drivers, level shifting circuits, logic, and protection. In this talk we will look at the roadmap of GaN-on-Si integration and show how the role of discrete transistors is destined to diminish to near-zero in the next few years.

Technical Presentation
Extreme GaN - What Happens When eGaN® FETs are Exposed to Voltage Levels Well Above Data Sheet Limits Authors: Alejandro Pozo, Robert Strittmatter, Alex Lidow, Ph.D.

GaN transistors, and more recently integrated circuits, have been in mass production for over a decade [1] with several manufacturers reporting tens of millions of units shipped with billions of hours in actual end-use applications. The track record has been extraordinarily successful, and one of the key reasons is that GaN devices are far more rugged than their silicon MOSFET ancestors. Recently, Efficient Power Conversion (EPC) did a series of tests to take eGaN FETs beyond their data sheet limits to quantify the effects of large amounts of overstress voltage [3]. This paper will examine the results of some of those tests to show how operation under extreme conditions for long periods of time can be a practical new tool for power system design engineers.

Technical Presentation
GaN Devices for Motor Drive Applications Author: Marco Palma, Director of Motor Drives Systems and Applications

DC and battery-powered motor applications are moving from conventional silicon MOSFET, low PWM frequency inverters to GaN, high-frequency PWM inverters. The advantages rely on a higher system efficiency and on the elimination of the electrolytic capacitors, and the input inductor. To further reduce the EMI and to increase the voltage for traction applications, multilevel topologies are getting more popular and are poised to become the standard topologies soon. In this paper, gallium nitride-based discrete FETs and integrated circuits are shown to increase power density to a new level and move to high-frequency PWM inverters for electric motors used in many different applications including, but not limited to; servo drives, e-bikes, e-scooters, collaborative and low-voltage robot, medical robots, industrial drones, and motors used in automobiles.

Technical Presentation
Quick Estimation of Chip Scale Package GaN FETs Thermal Performance Using a Simple Circuit Model Author: Assaad El Helou, Ph.D., Senior Thermal Mechanical Applications Engineer

We present a reduced physics-based thermal model to predict the thermal performance of Chip Scale Package (CSP) GaN FETs mounted to printed circuit boards (PCBs) and provide an easy-to-use thermal characterization tool for engineers and designers to quickly assess thermal management strategies. The heat conductance from the GaN FET to both the PCB side and to the “case” (i.e., die exposed surface) are modeled using resistive-network circuit modeling. The thermal resistance in each conductance path is presented for different parameters relating to PCB construction (stack-up, area, via density), FET size, and cooling approach (TIM material, heat spreader and heatsink). A comprehensive set of thermal finite-element simulations was run over the set of parameters. The results, presented in easy “look-up” style graphs, show that even with a small footprint, GaN FETs power-handling capability can be extended when effectively cooled using a simple PCB design and thermal management approach.

More information and register

Digi-Key Electronics Webinar

2021年11月9日星期二 13:00
Digi-Key Electronics Webinar
地点: Online

Webinar: Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density- Powered by Digi-Key Electronics

The demand for thinner and more powerful electronic products has increased dramatically over the past decade. Consumers are looking for thinner solutions, which are increasingly more power hungry. How do we address the demand for a thinner power supply with greater power density? Discover these solutions used to offer ultra-thin, high power density 48 DC/DC solutions, thanks to the EPC eGaN FETs and Würth Elektronik knowledge of power inductors in this FREE 1-hour training Powered by Digi-Key Electronics, and presented jointly by Würth Elektronik and EPC.

Register Today