议题:基于高功率密度、减少功耗的氮化镓器
件的非隔离式负载点模块

  

ECCE 2012
September 15 – 20, 2012

"Optimization of a High Density Gallium Nitride based Non-Isolated Point of Load Module"
Speakers: David Reusch, Fred C. Lee, David Gilham, Yipeng Su; Virginia Tech
Location: Raleigh, NC
 

Abstract:
This paper will discuss the effect of parasitics on the performance of high frequency eGaN POLs, methods to improve the circuit layout of a highly integrated 3D integrated POL module, and the thermal design of a high density module using advanced substrates with improved thermal conductivity. The final demonstration is a 900W/in3 12V 2MHz Alumina DBC eGaN converter which offers unmatched power density compared to state of the art industry products and research.