讲者： 宜普电源转换公司首席执行官Alex Lidow博士
地点： 美国San Jose
Enhancement mode gallium nitride transistors have been commercially available for over three years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. In this presentation we will show the benefits derived from the latest generation eGaN® FETs in emerging high frequency applications such as wireless power transmission, RF envelope tracking, and high frequency resonant DC-DC conversion. We will also discuss the benefits from gallium nitride transistors in applications such as satellite power systems and high power density DC-DC converters. All cases support the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors.