GOMAC Tech Conference
March 19-22, 2012

"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics"
Speaker: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Las Vegas, Nevada
 

Abstract:
Enhancement mode Gallium-Nitride-on-silicon (eGaN) FETs have been in the commercial marketplace for more than two years as replacements for silicon power MOSFETs. Superior conductivity and switching characteristics allow designers to greatly reduce system power losses, size, weight, and cost. eGaN FETs have demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this paper we present new results characterizing the stability of these devices under radiation exposure as well as showing their capability in high-performance DC-DC converters and operating at frequencies as high as 1 GHz.

Figure 1: EPC2015 40V eGaN FETs in a 1 MHz, 12 V – 1.2 V Buck Converter Compared with state-of-the-art commercial MOSFETs. The eGaN FETs exhibit exceptional radiation tolerance to SEE and total dose exposure.

 

Figure 2: SEE capability of first-generation eGaN FETs.

 

Figure 3: Total Dose capability of first generation 40V eGaN FETs