EPC at PCIM Digital Days 2021

于PCIM EU 2021研讨会向GaN技术专家提问

参观于2021年5月3日至7日在PCIM EU举行的EPC虚拟展位

EPC的GaN专家将在PCIM EU举行期间,讨论氮化镓技术的最新进展并支持您的设计。

与我们的GaN专家团队安排会议

EPC会议日程 – 所有时间均为纽伦堡当地时间

使用单片氮化镓ePower™功率级的双向、48 V /12 V的 1 / 16 砖式转换器

2021年5月4日星期二上午9:50 (第4组)

氮化镓集成电路(IC)的技术发展实现了半桥和栅极驱动器的集成,从而实现单芯片解决方案 – 它简化了布局、减小面积并降低了成本。本文将介绍一种双向1/16砖DC-DC转换器,该转换器使用氮化镓功率级集成电路,适用于48 V/12 V的应用,最大输出功率为300 W,峰值效率为95%。

1kW且基于eGaN FET的LLC谐振转换器,尺寸为1/8砖式,适用于48 V服务器应用

2021年5月4日星期二下午3:45(第3组)

本文介绍面向48 V服务器应用、1/8砖式、1 kW 且基于eGaN FET的LLC谐振转换器。采用可选的GaN FET、参数设计、LLC谐振拓扑,以实现零电压开关(ZVS)。采用简单的方法将散热器安装到电路板的两面,从而提高散热性能。独立的1 kW LLC谐振转换器的原型可实现97.6%的峰值效率和96.5%的满载效率。

Exhibitor Seminar: How GaN is Driving Changes in Autonomy, Automotive, and eMobility

Tuesday, May 4, 2021 4:30 PM – 5:00 PM

Join EPC CEO and co-founder, Alex Lidow, to discover how GaN is driving changes in autonomy, automotive, and eMobility.

Autonomy: GaN FETs and ICs are a vital element in the “eyes” of autonomous vehicles by power the lasers used in lidar systems for applications from food delivery pods to warehouse robots to drones to fully autonomous taxis.

Automotive: For 48 V automotive bus systems in mild hybrid electric vehicles, GaN technology increases the efficiency, shrinks the size, and reduces system cost.

eMobility: The rapid emergence of scooters and e-bikes has opened new markets for chargers (wired and wireless), and compact motor drives. GaN transistors and integrated circuits are in all these applications due to their affordability, efficiency, and small size.

Bodo Power Systems主持的小组讨论: GaN-based 3 kW Bi-directional Converter for 48 V Automotive Power

2021年5月5日星期三下午3:55至下午4:25

For 48 V bus systems, GaN technology increases the efficiency, shrinks the size, and reduces system cost. Due to the fast-switching speed, GaN-based solutions can operate at higher frequencies than traditional MOSFET solutions, reducing the number of phases per systems and thus, reducing both size and cost. In A GaN-based 3 kW 48 V to 12 V DC-DC converter, this higher switching frequency results in a solution that iss 35% smaller, results in 10 W lower inductor DCR losses, AND reduces cost of the system by about 20% over the MOSFET solution.

Watch, on-demand the “How to GaN Webinar Series.”

To meet virtually with an EPC GaN expert at PCIM,
schedule a meeting.

EPC公司从2010年开始投入生产,目前使用氮化镓场效应晶体管(eGaN® FET)和集成电路的客户已超过500个。多年来,我们的GaN技术专家与这些客户合作,累积了宝贵的经验,可以与您分享并为您答疑解难。

如果您对氮化镓场效应晶体管及集成电路有任何疑问,请向GaN技术专家提问

EPC公司的氮化镓工程师会在各个相关的议题为您解疑答难,包括:

Ask EPC Engineers
  • 设计指导
  • 布局审查
  • 组装审查
  • 如何选择eGaN FET及集成电路
  • 产品可靠性
  • 演示板及评估套件
  • 仿真工具
  • 为您的公司提供训练及支持
  • 如何购买宜普公司的产品?