博客 -- 氮化镓技术如何击败硅技术
Term: Data Center
8 post(s) found

How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage

How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage
十二月 15 2020

Brick DC-DC converters are widely used in data center, telecommunication and automotive applications, converting a nominal 48 V bus to (or from) a nominal 12 V bus. Advances in GaN integrated circuit (IC) technology have enabled the integration of the half bridge and gate drivers, resulting in a single chip solution that simplifies layout, minimizes area, and reduces cost.

This application note discusses the design of a digitally controlled bi-directional 1/16th brick converter using the integrated GaN power stage for 48 V-to-12 V application, with up to 300 W output power, and peak efficiency of 95%.

The standard dimension of the 1/16th brick converter is 33 x 22.9 mm (1.3 x 0.9 inch). The height limit for this design is set to 10 mm (0.4 inch).

How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN® FETs

How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN<sup>®</sup> FETs
十一月 03 2020

Acknowledgement - This application note and associated hardware was developed in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin.

Motivation

The expansion of applications such as cloud computing, wearables, machine learning, autonomous driving, and IoT drive us towards an even more data-intensive world, increasing demands on data centers and power consumption [1, 2]. The importance of efficiency, power density, and cost of the AC to DC switching power supply is driving innovative solutions that eGaN FETs can solve to yield ultra-high efficiency power factor correction (PFC) front-end rectifier solutions that are the focus of this how-to-application note.

Building the Smallest, Most Cost Effective, Highest Efficiency Non-isolated 48 V to 5 - 12 V DC to DC Converters using latest Generation 100 V eGaN FETs

Building the Smallest, Most Cost Effective, Highest Efficiency Non-isolated 48 V to 5 - 12 V DC to DC Converters using latest Generation 100 V eGaN FETs
四月 24 2019

The latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. The EPC2045, shown in figure 1, is rated at 100 V with 7 mΩ on- resistance that can carry a continuous current of 16 A. The EPC2045 is nearly one-tenth the footprint of a comparable Si MOSFET and has lower parasitic capacitances and can switch much faster than equivalent silicon devices, yielding lower switching loss even at higher switching frequency.

The EPC2053, shown in figure 2, is rated at 100 V with 4 mΩ on-resistance that can carry a continuous current of 32 A. The EPC2053 has lower parasitic capacitances and on-resistance than its silicon counterparts, yielding faster switching speed and lower power losses even at higher switching frequencies. These characteristics enable increasing the output power while shrinking the volume of the converter.

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs
四月 03 2019

Motivation

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high-efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 12 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2024 is demonstrated, yielding a peak efficiency of 98.4% and a power density exceeding 1500 W/in3.

氮化镓技术在四方面拯救地球

氮化镓技术在四方面拯救地球
四月 11 2017

Gallium nitride (GaN) is a better semiconductor than silicon. There are many crystals that are better than silicon, but the problem has always been that they are far too expensive to be used in every application where silicon is used. But, GaN can be grown as an inexpensive thin layer on top of a standard silicon wafer enabling devices that are faster, smaller, more efficient, and less costly than their aging silicon counterparts.

My Predictions for 2017

My Predictions for 2017
十一月 11 2016

In January of 2016 I made several predictions for the then-nascent year. Predictions were made for new markets such as wireless charging, augmented reality, autonomous vehicles, and advances in medical diagnostics and internet access. Progress in these markets was made on all fronts, sometimes faster and sometimes slower than anticipated. So here we are about to start a new year and, perhaps foolishly I am ready once again to predict the future.

Forget Everything You Thought You Knew About Semiconductors

Forget Everything You Thought You Knew About Semiconductors
十月 13 2016

In past postings , we looked at the applications that have emerged because of new capabilities available with #GaN technology. We also discussed the transformational nature of some of these applications in areas like medicine, telecommunications,human-machine interfaces, and the delivery of electrical power itself (wireless power transfer). GaN technology is entering an era similar to the 80’s and 90’s when the utility of technological improvement was apparent across broad commercial markets. Consequentially, consumers will be willing to pay a premium for the life-style improvements enabled by these improvements thereby accelerating growth of GaN applications for the foreseeable future.

Rethinking Server Power Architecture in a Post-Silicon World: Getting from 48 Vin – 1 Vout Directly

Rethinking Server Power Architecture in a Post-Silicon World: Getting from 48 Vin – 1 Vout  Directly
七月 26 2016

The demand by our society for information is growing at an unprecedented rate. With emerging technologies, such as cloud computing and the internet of things (IoT), this trend for more and faster access to information is showing no signs of slowing. What makes the transfer of information at high rates of speed possible are racks and racks of servers, mostly located in centralized data centers.