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How GaN is Revolutionizing Motor Drive Applications

How GaN is Revolutionizing Motor Drive Applications
二月 09 2021

Rethinking the Ordinary and Overcoming Mental Biases

Motor drive applications span several markets: industrial, appliance, and automotive. A commonality that occurs regardless of market is that when a new technology is proposed, it faces resistance to its adoption; after all, it is human nature to stick with what is known and resist change.

How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage

How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage
十二月 15 2020

Brick DC-DC converters are widely used in data center, telecommunication and automotive applications, converting a nominal 48 V bus to (or from) a nominal 12 V bus. Advances in GaN integrated circuit (IC) technology have enabled the integration of the half bridge and gate drivers, resulting in a single chip solution that simplifies layout, minimizes area, and reduces cost.

This application note discusses the design of a digitally controlled bi-directional 1/16th brick converter using the integrated GaN power stage for 48 V-to-12 V application, with up to 300 W output power, and peak efficiency of 95%.

The standard dimension of the 1/16th brick converter is 33 x 22.9 mm (1.3 x 0.9 inch). The height limit for this design is set to 10 mm (0.4 inch).

2020 New Year with GaN

2020 New Year with GaN
一月 02 2020

Dear Friends, colleagues and partners of EPC,

Happy New Year to you and your family from all of us at EPC!

2019 was a year to remember for EPC’s GaN innovations and the multiple use cases for GaN that have come to fruition. EPC’s latest generation of GaN products have enabled engineers to gain power stage advantages due to their low RDS(on) characteristics, higher efficiency, enhanced thermal properties, small size and low cost. Now, more than ever, power system designers are switching from silicon devices to higher performance GaN components.

The Time for Disruption is Now − GaN Makes a Frontal Attack on Silicon Power MOSFETs

The Time for Disruption is Now − GaN Makes a Frontal Attack on Silicon Power MOSFETs
十一月 12 2019

Silicon has been around long enough. It’s time for a younger and far more fit challenger to take over semiconductor material dominance.

When I first started developing power devices 44 years ago, the “king of the hill” was the silicon power bipolar transistor.  In 1978 International Rectifier (IRF) launched power MOSFETs as a faster alternative to the slower and aging bipolar devices.  The early adopters of the power MOSFET were applications where the bipolar just was not fast enough.  The signature example for its adoption was the switching power supply for the desktop computer; first at Apple, and then at IBM