博客 -- 氮化镓技术如何击败硅技术
Term: Design
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eGaN FETs Are Low EMI Solutions!

eGaN FETs Are Low EMI Solutions!
五月 19 2020

GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI?

This blog discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.