早在2015年，Venture Beat就发表了一篇关于氮化镓芯片取代硅的文章。在那篇文章中，我断言氮化镓基功率半导体的广泛普及是可能的，因为GaN FET将比硅具有更高的性能和更低的成本。然而，人们仍然普遍误解氮化镓器件还没有达到那个里程碑……这是一个错误的神话。在这篇博客文章中，我将试图打破这个神话，并提醒大家，本次讨论仅限于额定电压低于400 V的器件的应用领域，因为这是EPC 的重点产品。

Rethinking the Ordinary and Overcoming Mental Biases

Motor drive applications span several markets: industrial, appliance, and automotive. A commonality that occurs regardless of market is that when a new technology is proposed, it faces resistance to its adoption; after all, it is human nature to stick with what is known and resist change.

Dear Friends, colleagues and partners of EPC,

Happy New Year to you and your family from all of us at EPC!

2019 was a year to remember for EPC’s GaN innovations and the multiple use cases for GaN that have come to fruition. EPC’s latest generation of GaN products have enabled engineers to gain power stage advantages due to their low R_DS(on) characteristics, higher efficiency, enhanced thermal properties, small size and low cost. Now, more than ever, power system designers are switching from silicon devices to higher performance GaN components.