博客 -- 氮化镓技术如何击败硅技术
Term: GaN
53 post(s) found

11月 14, 2023

如何选择最佳的氮化镓(GaN)栅极驱动器

Chang-Woo Ryu, Senior FAE, Korea

了解在选择氮化镓(GaN)栅极驱动器时应考虑的关键因素,在这里为您的电力电子产品设计做出最佳选择。

8月 08, 2023

氮化镓器件在医疗技术应用的潜力

Renee Yawger, Director of Marketing

为您的医疗技术应用选择氮化镓产品时,请考虑性能要求、尺寸和重量限制、产品和供应商的可靠性,以及成本等因素。我们会针对这些因素为您提供最新一代的氮化镓器件的最佳组合 - 您只需在网上“产品选择指南”的最新一代器件、在状态栏中剔出“首选”。还有多种设计工具可为您的应用选择正确的氮化镓产品,包括降压计算器、热计算器和交叉参考工具,它们都可以在Power Bench工具套件中找到。

8月 02, 2023

A New Approach to Design a More Efficient Vacuum Cleaner Motor Drive Inverter Using EPC9176 Evaluation Boards

Marco Palma, Director of Motor Drives Systems and Applications

Learn how EPC’s new demo board, the EPC9176 with its six QFN-packaged GaN ICs allows for more efficient, high-performance vacuum cleaner motors.

5月 10, 2023

氮化镓器件的开关频率:在下一代高频电路中使用氮化镓技术

Renee Yawger, Director of Marketing

氮化镓(GaN)器件是一种非常坚硬和在机械方面非常稳定的宽带隙半导体材料,用于生产功率器件、射频元件和发光二极管 (LED)。其开关频率远高于硅器件,使电力电子设计人员能够利用氮化镓器件创建更小、更高效、性能更高的系统,这是以前采用硅技术难以实现。

1月 20, 2023

Shrink Motor Drives for eBikes and Drones

Marco Palma, Director of Motor Drives Systems and Applications

GaN is a game changer for motor drive applications. For designers to take advantage of this technology, fast and reliable time-to-market is critical. Easy-to-use reference designs using state-of-the-art electronics and techniques provide a valuable tool to speed time to market. The EPC9173 tool allows designers of eBikes and drones to enhance motor system size, performance, range, precision, and torque, all while simplifying design for faster time-to-market.  

The EPC9173 integrates all the necessary circuits to operate a 3-phase BLDC motor with high performance, 48 V input, 1.5kW output, and three-phase inverter using six EPC23101  GaN ICs. Thanks to the high-power density and the high electrical conductivity of GaN ICs, the EPC9173 delivers up to 25 ARMS on each leg and supports PWM switching frequencies up to 250 kHz under a natural convection passive heatsink. The resultant quality of the current output waveforms, lesser torque oscillations, and total system efficiency increase the performance of the motor-drive system. Further, the extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

1月 16, 2023

有关氮化镓半导体的常见错误观念

Renee Yawger, Director of Marketing

氮化镓(GaN)是一种全新的使能技术,可实现更高的效率、显着减小系统尺寸、更轻和于应用中取得硅器件无法实现的性能。那么,为什么关于氮化镓半导体仍然有如此多的误解?事实又是怎样的呢?

8月 25, 2022

How to Design a 2 kW 48 V/12 V Bi-Directional Power Module with GaN FETs for 48 V Mild Hybrid Electric Vehicles

Tiziano Morganti, Senior Field Application Engineer at Efficient Power Conversion

Environmental pressures are creating pressure to quickly adopt newer, cleaner, and more efficient transportation options.  In 2025, 1 in 10 vehicles sold are expected to be a more fuel efficient 48 V mild hybrid.  These systems will require a 48V – 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. The design priorities for these systems are size, cost, and high reliability. GaN power conversion solutions are perfect to support a 48 V to 12 V bidirectional converter used in these newer models.

A new reference design demo board, the EPC9165, is available to help jump start the design of a 2 kW bi-directional converter.  The EPC9165 is a synchronous buck/boost converter with other supporting circuitry including current sensors and temperature sensor.  The EPC9528 controller board ships with the EPC9165 to incorporate digital control and housekeeping power supply; this board uses the dsPIC33CK256MP503 digital controller from Microchip.

8月 04, 2022

Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input

Cecilia Contenti, Vice President Of Strategic Marketing at Efficient Power Conversion

48 volts is increasingly being adopted as the new standard for computing data centers and consumer electronics such as laptops. The new USB PD3.1 standard is also making inroads into laptops driven in part by the increase in USB voltage to 48 V that increases the total power delivery up to 240 W given a current limit of 5 A for the connectors and cables. Compatible power supplies using the new USB PD standard also face increasing pressure to yield a small form factor solution driving the need for high power-density. The fast-switching speed and low RDSon of GaN FETs address this challenge in multiple circuits that make up the power supply.

8月 03, 2022

CEO Corner – Alex Lidow Dispels the Myth that GaN Devices Cost More than Silicon

Alex Lidow, Ph.D., CEO and Co-founder

Back in 2015 Venture Beat published an article on gallium nitride chips taking over from silicon.  In that article I made the assertion that widespread adoption of gallium nitride-based power semiconductors would be possible because GaN FETs would have higher performance AND lower cost than silicon.  Yet, there is still a widespread misconception that GaN has not yet reached that milestone…that is a false myth.  In this blog post, I will attempt to dispel this myth with the caveat that this discussion is limited to devices rated at less than 400 V, as that is the application focus for EPC’s FET and IC products.

It has been more than 12 years since the first GaN-on-Si power transistors started in volume production, and in many applications, such as lidar and space electronics, adoption has been extremely rapid.  But what about other markets such as consumer products, computers, motor drives, and automotive?  Even in each of those areas GaN devices have started to appear in volume as the predicted tipping point of better performance AND lower cost is a reality.

5月 07, 2022

How to Use the GaN FET Thermal Calculator to Boost Reliability and Shorten Time-To-Market in Power Electronics System Designs

Assaad El Helou, Senior Thermal/Mechanical Engineer, Applications Engineering

When “displacement” technologies such as EPC’s GaN power FETs and ICs are introduced and new levels of performance are possible, modeling your design offers comfort and insight to your circuits’ capabilities and needs. This blog post discussed the latest addition to the “EPC GaN Power Bench, our on-line modeling tool library, EPC’s GaN FET Thermal Calculator