EPC9025:开发板
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EPC Development Board

VDS(最大值)、65 V
ID(RMS最大值)、2.2 A
带板载驱动器的半桥配置

The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of the EPC8000 family of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

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eGaN FET及集成电路
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