EPC9085: 40 V, 20 A 半桥开发板
The EPC9085 development board is a 40 V maximum device voltage, 20 A maximum output current, half bridge with onboard gate drives, featuring the EPC2049 enhancement mode (eGaN®) field effect transistor (FET).
The purpose of this development board is to simplify the evaluation process of the EPC2049 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9085 development board is 2” x 2” and contains two EPC2049 eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver.
The EPC9085 has been evaluated in a 24 V to point-of-load DC-DC converter application at 15 A when switching at 500 kHz.