VDS（最大值）, 65 V
ID（RMS最大值）, 1.6 A
半桥并配有驱动器
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs).
The purpose of these development boards is to simplify the evaluation process of the EPC8000 family of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
产品状况:停产产品
组装好的参考设计是非卖品，仅用作测试和验证性能。
如需进一步协助，可联系氮化镓专家。