﻿<?xml version="1.0" encoding="utf-8"?><!--RSS Genrated: Fri, 30 Oct 2026 14:06:22 GMT--><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:content="http://purl.org/rss/1.0/modules/content/" xmlns:ev="http://purl.org/rss/1.0/modules/event/"><channel><title>Efficient Power Conversion Corporation</title><link>https://epc-co.com:443/epc/cn/设计支持/technical-documents/epc技术文章/ctl/rss/mid/12411</link><atom:link href="https://epc-co.com:443/epc/cn/设计支持/technical-documents/epc技术文章/ctl/rss/mid/12411" rel="self" type="application/rss+xml" /><description>RSS document</description><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[EPC91121 评测：GaN FET、电流检测与热设计]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3385/epc91121-%e8%af%84%e6%b5%8b%ef%bc%9agan-fet%e3%80%81%e7%94%b5%e6%b5%81%e6%a3%80%e6%b5%8b%e4%b8%8e%e7%83%ad%e8%ae%be%e8%ae%a1</link><description><![CDATA[  EPC91121  是一款紧凑型高性能三相无刷直流（BLDC）电机驱动逆变器，适用于 24 V 电池供电应用。该演示板采用 EPC2366 增强型 GaN FET，工作电压范围为 18–30 V，支持高达 150 kHz 的 PWM 开关频率。集成的栅极驱动器、相电流和电压检测、温度监测以及辅助电源，便于搭配兼容控制器进行评估。该演示板在不使用散热器的情况下，每相可提供高达 30 A RMS ...]]></description><pubDate>Wed, 28 Oct 2026 22:15:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3385/epc91121-%e8%af%84%e6%b5%8b%ef%bc%9agan-fet%e3%80%81%e7%94%b5%e6%b5%81%e6%a3%80%e6%b5%8b%e4%b8%8e%e7%83%ad%e8%ae%be%e8%ae%a1</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3385]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[High-Density 800 V-to-50 V, 12 V, and 6 V Conversion]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3381/high-density-800-v-to-50-v-12-v-and-6-v-conversion</link><description><![CDATA[ Michael De Rooij of EPC presents low-voltage GaN architectures for converting 800 V to 50 V, 12 V, and 6 V in server power systems. The talk highlights an input-series, output-parallel (ISOP) ...]]></description><pubDate>Mon, 19 Oct 2026 22:48:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3381/high-density-800-v-to-50-v-12-v-and-6-v-conversion</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3381]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[A new 100 V GaN transistor for Artificial Intelligence, Industrial, and Motor-Drive Applications]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3379/a-new-100-v-gan-transistor-for-artificial-intelligence-industrial-and-motor-drive-applications</link><description><![CDATA[  Alejandro Pozo, Director of Applications Engineering at Efficient Power Conversion  

 Artificial intelligence (AI) computing, robotics, autonomous machines, and industrial automation are driving ...]]></description><pubDate>Mon, 19 Oct 2026 07:00:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3379/a-new-100-v-gan-transistor-for-artificial-intelligence-industrial-and-motor-drive-applications</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3379]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[面向下一代电力电子的GaN测试]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3376/%e9%9d%a2%e5%90%91%e4%b8%8b%e4%b8%80%e4%bb%a3%e7%94%b5%e5%8a%9b%e7%94%b5%e5%ad%90%e7%9a%84gan%e6%b5%8b%e8%af%95</link><description><![CDATA[  氮化镓（GaN）功率器件 正迅速从一种新兴技术转变为实现高效率电源转换的关键元件。随着AI基础设施、数据中心、机器人和电气化等应用对更高效率、更高功率密度和更快开关速度的需求不断提升，如何测试 GaN器件 正变得越来越重要。 

 为了了解半导体测试如何随着GaN技术的发展而变化，Accotest全球市场总监 Huipeng Liu接受了采访 ...]]></description><pubDate>Tue, 13 Oct 2026 03:13:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3376/%e9%9d%a2%e5%90%91%e4%b8%8b%e4%b8%80%e4%bb%a3%e7%94%b5%e5%8a%9b%e7%94%b5%e5%ad%90%e7%9a%84gan%e6%b5%8b%e8%af%95</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3376]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[从800 V到处理器核心：展示EPC GaN的卓越性能]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3372/%e4%bb%8e800-v%e5%88%b0%e5%a4%84%e7%90%86%e5%99%a8%e6%a0%b8%e5%bf%83%ef%bc%9a%e5%b1%95%e7%a4%baepc-gan%e7%9a%84%e5%8d%93%e8%b6%8a%e6%80%a7%e8%83%bd</link><description><![CDATA[ EPC展示了一款覆盖从800 V到核心电压的6 kW GaN平台。ISOP级将 800 V转换为6 V ，随后由单片GaN降压转换器以5 MHz的开关频率工作，输出0.9 V、11 A。 
 观看视频 ]]></description><pubDate>Wed, 30 Sep 2026 16:25:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3372/%e4%bb%8e800-v%e5%88%b0%e5%a4%84%e7%90%86%e5%99%a8%e6%a0%b8%e5%bf%83%ef%bc%9a%e5%b1%95%e7%a4%baepc-gan%e7%9a%84%e5%8d%93%e8%b6%8a%e6%80%a7%e8%83%bd</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3372]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[瞬态建模与环路稳定性：总电离剂量环境下航天用 eGaN HEMT 低压差稳压器]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3371/%e7%9e%ac%e6%80%81%e5%bb%ba%e6%a8%a1%e4%b8%8e%e7%8e%af%e8%b7%af%e7%a8%b3%e5%ae%9a%e6%80%a7%ef%bc%9a%e6%80%bb%e7%94%b5%e7%a6%bb%e5%89%82%e9%87%8f%e7%8e%af%e5%a2%83%e4%b8%8b%e8%88%aa%e5%a4%a9%e7%94%a8-egan-hemt-%e4%bd%8e%e5%8e%8b%e5%b7%ae%e7%a8%b3%e5%8e%8b%e5%99%a8</link><description><![CDATA[  作者：Diego de Azcuénaga  
 航天平台电源管理系统的架构要求半导体器件能够在持续电离辐射通量环境下保持确定性运行。在传统航天级 LDO 线性稳压器中，硅 MOSFET 通常作为主要的调整元件。然而，长期暴露于总电离剂量（TID）辐射会在这些器件的栅极介电层中产生电子-空穴对。滞留在氧化层界面的空穴会导致阈值电压（V th ）发生偏移，并对跨导（g m ...]]></description><pubDate>Tue, 29 Sep 2026 17:26:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3371/%e7%9e%ac%e6%80%81%e5%bb%ba%e6%a8%a1%e4%b8%8e%e7%8e%af%e8%b7%af%e7%a8%b3%e5%ae%9a%e6%80%a7%ef%bc%9a%e6%80%bb%e7%94%b5%e7%a6%bb%e5%89%82%e9%87%8f%e7%8e%af%e5%a2%83%e4%b8%8b%e8%88%aa%e5%a4%a9%e7%94%a8-egan-hemt-%e4%bd%8e%e5%8e%8b%e5%b7%ae%e7%a8%b3%e5%8e%8b%e5%99%a8</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3371]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[从 1 MW 机架到 AI 工厂：重新思考从电网到 GPU 的电力传输]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3369/%e4%bb%8e-1-mw-%e6%9c%ba%e6%9e%b6%e5%88%b0-ai-%e5%b7%a5%e5%8e%82%ef%bc%9a%e9%87%8d%e6%96%b0%e6%80%9d%e8%80%83%e4%bb%8e%e7%94%b5%e7%bd%91%e5%88%b0-gpu-%e7%9a%84%e7%94%b5%e5%8a%9b%e4%bc%a0%e8%be%93</link><description><![CDATA[  作者：EPC 市场传播总监 Maurizio Di Paolo Emilio  

 人工智能正在催生新一代数据中心。如今，重点已不再只是将更多计算能力塞进一个机架，而是要在合理的物理空间内，以高效、可靠的方式向单个机架提供数百千瓦，乃至最终达到兆瓦级的功率。 

 这一转型的规模正日益显现。NVIDIA 正在为 AI 基础设施打造 800 VDC 电源架构，可支持 1 MW ...]]></description><pubDate>Thu, 24 Sep 2026 14:27:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3369/%e4%bb%8e-1-mw-%e6%9c%ba%e6%9e%b6%e5%88%b0-ai-%e5%b7%a5%e5%8e%82%ef%bc%9a%e9%87%8d%e6%96%b0%e6%80%9d%e8%80%83%e4%bb%8e%e7%94%b5%e7%bd%91%e5%88%b0-gpu-%e7%9a%84%e7%94%b5%e5%8a%9b%e4%bc%a0%e8%be%93</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3369]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[<u>低电压</u>GaN迈向主流：Omdia看好AI、无人机和机器人领域的增长]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3366/u%e4%bd%8e%e7%94%b5%e5%8e%8bugan%e8%bf%88%e5%90%91%e4%b8%bb%e6%b5%81%ef%bc%9aomdia%e7%9c%8b%e5%a5%bdai%e3%80%81%e6%97%a0%e4%ba%ba%e6%9c%ba%e5%92%8c%e6%9c%ba%e5%99%a8%e4%ba%ba%e9%a2%86%e5%9f%9f%e7%9a%84%e5%a2%9e%e9%95%bf</link><description><![CDATA[  作者：Maurizio Di Paolo Emilio，EPC市场传播总监  

 氮化镓（GaN）功率技术正进入一个新阶段。在快速充电器、汽车电源转换和其他较高电压应用中获得广泛采用之后，额定电压为40 V及以下的GaN器件正在开辟与硅MOSFET竞争的新战线。Omdia研究总监Paul Pickering表示， 低电压 GaN可能成为未来几年功率半导体领域最具颠覆性的技术发展之一。 ...]]></description><pubDate>Tue, 15 Sep 2026 13:27:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3366/u%e4%bd%8e%e7%94%b5%e5%8e%8bugan%e8%bf%88%e5%90%91%e4%b8%bb%e6%b5%81%ef%bc%9aomdia%e7%9c%8b%e5%a5%bdai%e3%80%81%e6%97%a0%e4%ba%ba%e6%9c%ba%e5%92%8c%e6%9c%ba%e5%99%a8%e4%ba%ba%e9%a2%86%e5%9f%9f%e7%9a%84%e5%a2%9e%e9%95%bf</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3366]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[高频 100 V GaN 电机驱动器将低压运动控制提升到新水平]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3359/%e9%ab%98%e9%a2%91-100-v-gan-%e7%94%b5%e6%9c%ba%e9%a9%b1%e5%8a%a8%e5%99%a8%e5%b0%86%e4%bd%8e%e5%8e%8b%e8%bf%90%e5%8a%a8%e6%8e%a7%e5%88%b6%e6%8f%90%e5%8d%87%e5%88%b0%e6%96%b0%e6%b0%b4%e5%b9%b3</link><description><![CDATA[  作者：宜普电源转换公司（EPC）市场传播总监 Maurizio Di Paolo Emilio，以及电机驱动市场与系统工程副总裁 Marco Palma  

 工业自动化、协作机器人、自主移动机器人（AMR）、无人机和精密伺服系统的快速发展，正推动新一代低压电机驱动器的发展，以实现更高效率、更高功率密度以及更优异的动态性能。过去，硅 MOSFET ...]]></description><pubDate>Wed, 09 Sep 2026 01:57:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3359/%e9%ab%98%e9%a2%91-100-v-gan-%e7%94%b5%e6%9c%ba%e9%a9%b1%e5%8a%a8%e5%99%a8%e5%b0%86%e4%bd%8e%e5%8e%8b%e8%bf%90%e5%8a%a8%e6%8e%a7%e5%88%b6%e6%8f%90%e5%8d%87%e5%88%b0%e6%96%b0%e6%b0%b4%e5%b9%b3</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3359]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[Interview: EPC Execs Discuss GaN Technology and Solutions at PCIM Asia]]></title><link>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3358/interview-epc-execs-discuss-gan-technology-and-solutions-at-pcim-asia</link><description><![CDATA[ In this interview on EEPower, we learn about EPC’s Gen 8 GaN platform for AI power delivery and Trinity motor control—on display this week at PCIM Asia—to address rising power and space demands in ...]]></description><pubDate>Fri, 04 Sep 2026 15:30:00 GMT</pubDate><guid>https://epc-co.com/epc/cn/设计支持/technical-documents/epc技术文章/artmid/12411/articleid/3358/interview-epc-execs-discuss-gan-technology-and-solutions-at-pcim-asia</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3358]]></dc:identifier></item></channel></rss>