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Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

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Experts Weigh in on GaN & SiC at APEC 2024

Experts Weigh in on GaN & SiC at APEC 2024

In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.

The GaN speakers address two critical questions shaping the future of wide bandgap:

  1. The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
  2. Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
    • Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
    • Michael de Rooij, VP of applications engineering at EPC
    • Balu Balakrishnan, CEO of Power Integrations

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EPC推出首款具有最低1 mOhm 导通电阻的GaN FET

EPC推出首款具有最低1 mOhm 导通电阻的GaN FET

EPC推出采用紧凑型QFN封装(3 mm x 5 mm)的100 V、1 mOhm GaN FET(EPC2361),助力DC/DC转换、快充、电机驱动和太阳能 MPPT等应用实现更高的功率密度。

2024年2月27日—全球增强型氮化镓(GaN)功率 FET 和 IC领域的领导者宜普电源转换公司(EPC)推出 100 V、1 mOhm EPC2361。这是市场上具有最低导通电阻的GaN FET,与EPC的上一代产品相比,其功率密度提高了一倍。

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Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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EPC GaN FET助力DC/DC转换器实现高功率密度和高效率基准

EPC GaN FET助力DC/DC转换器实现高功率密度和高效率基准

EPC GaN FET与Analog Devices驱动器和控制器相结合,为客户简化氮化镓基设计、提高其效率、降低散热成本、助力计算、工业和消费类应用的DC/DC转换器实现最高功率密度。

宜普电源转换公司(EPC )宣布推出采用 EPC GaN FET 和 Analog Devices, Inc. (ADI) 控制器的各种参考设计。

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EPC GaN FET可在数纳秒内驱动激光二极管,实现75~231A脉冲电流、 支持先进的汽车自动化

EPC GaN FET可在数纳秒内驱动激光二极管,实现75~231A脉冲电流、 支持先进的汽车自动化

宜普电源转换公司(EPC)推出三款激光驱动器电路板,这些板采用了符合AEC-Q101认证标准、快速转换的GaN FET以实现具备卓越性能的激光雷达系统。

EPC推出三款评估板,分别是EPC9179EPC9181EPC9180,它采用75 A、125 A、231 A脉冲电流激光驱动器和通过车规级AEC-Q101认证的EPC GaN FET - EPC2252EPC2204AEPC2218A。它比前代氮化镓器件的体积小30%和更具成本效益。这些电路板专为长距离和短距离车载激光雷达系统而设计,通过可选的输入和输出值,加快评估氮化镓基解决方案。

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宜普电源转换公司将在CES 2024展示基于氮化镓技术的消费电子应用场景– 电动出行、无人机、机器人及其他应用

宜普电源转换公司将在CES 2024展示基于氮化镓技术的消费电子应用场景–  电动出行、无人机、机器人及其他应用

EPC公司的氮化镓专家将在国际消费电子展(CES)上分享氮化镓技术如何增强消费电子产品的功能和性能

增强型氮化镓(eGaN®)FET和IC领域的全球领导者宜普电源转换公司(EPC)将在CES 2024展会展示其卓越的氮化镓技术如何为消费电子产品在功能和性能方面做出贡献 ,包括实现更高效率、更小尺寸和更低成本的解决方案。

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Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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Efficient Energy Technology(EET)的SolMate选用EPC氮化镓器件,使效率倍增和延长了产品使用寿命

Efficient Energy Technology(EET)的SolMate选用EPC氮化镓器件,使效率倍增和延长了产品使用寿命

Efficient Energy Technology GmbH(EET)位于奥地利,是设计和生产创新、用于阳台的小型发电厂的先驱。EET公司选用了宜普电源转换公司(EPC)的增强型氮化镓(eGaN®)功率晶体管(EPC2204), 用于其新型SolMate®绿色太阳能阳台产品。EPC2204在低RDS(on)和低COSS之间实现了最佳折衷,这对于要求严格的硬开关应用至关重要,同时在紧凑的封装中实现100 V的漏-源击穿电压。这种紧凑型设计显着缩小了PCB的尺寸,保持较小的电流环路和最大限度地减少EMI。

EET公司结合了EPC的氮化镓器件和其SolMate MPPT充电转换器,以实现多种优势:效率损失减半和整体效率从96%提高到98%。转换器的体积缩减了70%、BOM和制造成本降低了 20%而同时降低了对散热的要求。此外,由于开关频率提高了10倍,因此无需使用易于引发问题的电解电容器,从而延长了转换器的使用寿命。

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采用芯片级封装的氮化镓器件热建模

采用芯片级封装的氮化镓器件热建模

与采用传统硅器件的转换器相比,采用氮化镓基高电子迁移率晶体管 (HEMT) 具有许多材料和性能优势,已广泛用于消费和工业用功率转换领域。氮化镓器件在更高的开关频率下提高了功率转换效率,进而实现更低的系统成本和更高的功率密度。随着功率密度的增加,散热分析和热建模变得至关重要。我们将在本文分享EPC的热量计算器。 EPC公司制造增强型 GaN HEMT 和集成电路,例如支持多种转换器的半桥器件。

Power Electronics News
2023年11月
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GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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EPC的100 V GaN FET助力实现更小的电机驱动器, 用于电动自行车、机器人和无人机

EPC的100 V GaN FET助力实现更小的电机驱动器, 用于电动自行车、机器人和无人机

基于氮化镓器件的EPC9194逆变器参考设计显着提高了电机驱动系统的效率、扭矩而同时使得单位重量功率(比功率)增加了一倍以上。该逆变器非常微型,可集成到电机外壳中,从而实现最低的电磁干扰、最高的密度和最輕的重量。

宜普电源转换公司宣布推出三相BLDC电机驱动逆变器参考设计(EPC9194)。它的工作输入电源电压范围为 14V ~60V,可提供高达60 Apk(40 ARMS)的输出电流。此电压范围和功率使该解决方案非常适合用于各种三相BLDC电机驱动器,包括电动自行车、电动滑板车、无人机、机器人和直流伺服电机。

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GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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GaN产业版块动荡宜普如何越级挑战?

GaN产业版块动荡宜普如何越级挑战?

宜普电源转换公司首席执行官兼共同创办人Alex Lidow表示,GaN的成本竞争力亦与Si MOSFET并驾齐驱,潜在爆发力更有过之而无不及,目前最关键就是得重塑诸多研究者的老旧观念,认为GaN昂贵到碰不得。GaN的技术正迎来转捩点,在先进运算、车用电子、太空电子及消费电子等新型应用设计多数采GaN技术,而非Si MOSFET……

DIGITIMES Asia
2023年9月
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宜普发挥GaN成本优势目标超车Si MOSFET

宜普发挥GaN成本优势目标超车Si MOSFET

宜普电源转换公司首席执行官兼共同创办人Alex Lidow接受DIGITIMES专访,提到GaN主要会被应用在650V及以下市场。反之碳化硅则是主导650V以上的市场,它可望取代硅基绝缘栅极双极性晶体管。宜普也在开发对速度及尺寸特性极为要求的400V以下市场。且致力于制造比Si功率元件拥有更高性能、更具成本竞争力的GaN元件。

DIGITIMES Asia
2023年9月
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EPC Space Brings GaN to the Edge of the Atmosphere

EPC Space Brings GaN to the Edge of the Atmosphere

Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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